Datasheet HGTG30N60A4 - Fairchild IGBT, N, TO-247

Fairchild HGTG30N60A4

Part Number: HGTG30N60A4

Detailed Description

Manufacturer: Fairchild

Description: IGBT, N, TO-247

Docket:
HGTG30N60A4
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49343.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 75 A
Collector Emitter Voltage Vces: 2.6 V
Power Dissipation Max: 463 W
Collector Emitter Voltage V(br)ceo: 600 V
Transistor Case Style: TO-247
Number of Pins: 3
SVHC: No SVHC (18-Jun-2010)
Alternate Case Style: SOT-249
Current Ic Continuous a Max: 75 A
Current Temperature: 25°C
Device Marking: HGTG30N60A4
Fall Time tf: 38 ns
Full Power Rating Temperature: 25°C
Number of Transistors: 1
Package / Case: TO-247
Pin Format: GCE
Power Dissipation: 463 W
Power Dissipation Pd: 463 W
Power Dissipation Ptot Max: 463 W
Pulsed Current Icm: 240 A
Rise Time: 12 ns
SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5