Datasheet GT15J301 - Toshiba IGBT, 600 V, TO-220NIS

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-220NIS

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Docket:
GT15J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
l The 3rd Generation l Enhancement-Mode l High Speed l Low Saturation Voltage : tf = 0.30µs (Max.) (IC = 15A) : VCE (sat) = 2.7V (Max.) (IC = 15A) Unit: mm

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 15 A
• Collector Emitter Voltage Vces: 2.7 V
• Power Dissipation Max: 35 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-220NIS
• Current Ic Continuous a Max: 15 A
• Fall Time Typ: 150 ns
• Package / Case: TO-220NIS
• Power Dissipation: 35 W
• Power Dissipation Pd: 35 W
• Pulsed Current Icm: 30 A
• Rise Time: 120 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLPG 02