Datasheet GT25Q102 - Toshiba IGBT, 1200 V, TO-3P(LH)

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 1200 V, TO-3P(LH)

Download Data Sheet

Docket:
GT25Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q102
High Power Switching Applications
Unit: mm

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 25 A
• Collector Emitter Voltage Vces: 2.7 V
• Power Dissipation Max: 200 W
• Collector Emitter Voltage V(br)ceo: 1200 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-3P (LH)
• Current Ic Continuous a Max: 25 A
• Fall Time Typ: 160 ns
• Package / Case: TO-3P (LH)
• Power Dissipation: 200 W
• Power Dissipation Pd: 200 W
• Pulsed Current Icm: 50 A
• Rise Time: 100 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 1200 V

RoHS: Yes

Accessories:

• Fischer Elektronik - TF 3 2
• Fischer Elektronik - WLK 5