Datasheet GT30J324 - Toshiba IGBT, 600 V, TO-3P(N)

Toshiba GT30J324

Part Number: GT30J324

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(N)

Docket:
GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
· · · The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) · · Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm

Specifications:

Transistor Type: IGBT
DC Collector Current: 30 A
Collector Emitter Voltage Vces: 2.45 V
Power Dissipation Max: 170 W
Collector Emitter Voltage V(br)ceo: 600 V
Operating Temperature Range: -55°C to +150°C
Transistor Case Style: TO-3P (N)
Current Ic Continuous a Max: 30 A
Fall Time Typ: 50 ns
Junction Temperature Tj Max: 150°C
Junction to Case Thermal Resistance A: 0.735°C/W
Package / Case: TO-3P (N)
Power Dissipation: 170 W
Power Dissipation Pd: 170 W
Pulsed Current Icm: 60 A
Rise Time: 70 ns
Termination Type: Through Hole
Transistor Polarity: N Channel
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - TF 3 2
Fischer Elektronik - WLK 5