Datasheet Philips 2N1613

DISCRETE SEMICONDUCTORS DATA SHEET
book, halfpage M3D111 2N1613
NPN medium power transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04 1997 Apr 11 Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES PINNING • Low current (max. 500 mA) PIN • Low voltage (max. 50 V).
APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching and amplification.
1
handbook, halfpage DESCRIPTION 3 2 NPN medium power transistor in a TO-39 metal package. 2
3 Fig.1 1 MAM317 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V ICM peak collector current − 1 A
W Ptot total power dissipation Tamb ≤ 25 °C − 0.8 hFE DC current gain IC = 150 mA; VCE = 10 V 40 120 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 60 − 1997 Apr 11 2 MHz Philips Semiconductors Product specification NPN medium power transistor 2N1613 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 7 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation W Tamb ≤ 25 °C − 0.8 Tcase = 100 °C − 1.7 W Tcase ≤ 25 °C − 3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS
SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case CONDITIONS
note 1 Note
1. Refer to TO-39 standard mounting conditions. 1997 Apr 11 3 VALUE UNIT 218 K/W 58.3 K/W Philips Semiconductors Product specification NPN medium power transistor 2N1613 CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN.
− MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − 10 nA hFE DC current gain IC = 0.1 mA; VCE = 10 V 20 − IC = 10 mA; VCE = 10 V; note 1 IE = 0; VCB = 60 V 10 35 − IC = 10 mA; VCE = 10 V; Tamb = −55 °C 20 − IC = 150 mA; VCE = 10 V; note 1 120 40 nA 20 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 1.5 V VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA − 1.3 V Cc collector capacitance IE = ie = 0; …