Datasheet 2MBI100S-120 - Fuji Electric IGBT MODULE, 1200 V, 100 A
Part Number: 2MBI100S-120
Detailed Description
Manufacturer: Fuji Electric
Description: IGBT MODULE, 1200 V, 100 A
Docket:
Fuji Semiconductor, Inc.
- P.O. Box 702708 - Dallas, TX - (972) 733-1700 - www.fujisemiconductor.com
Specifications:
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Voltage Vces: 2.6 V
- Current Ic @ Vce Sat: 75 A
- Current Ic Continuous a Max: 100 A
- Current Temperature: 25°C
- DC Collector Current: 100 A
- External Depth: 62 mm
- External Length / Height: 30 mm
- External Width: 108 mm
- Fall Time tf: 300 ns
- Full Power Rating Temperature: 25°C
- Isolation Voltage: 2.5kV
- Junction Temperature Tj Max: 150°C
- Module Configuration: Dual
- Mounting Type: Screw
- Number of Pins: 7
- Number of Transistors: 2
- Package / Case: M234
- Power Dissipation Max: 690 W
- Power Dissipation Pd: 780 W
- Power Dissipation: 780 W
- Pulsed Current Icm: 300 A
- Rise Time: 600 ns
- Transistor Case Style: Module
- Transistor Polarity: N Channel
- Transistor Type:
- Voltage Vces: 1.2kV
- Weight: 0.4kg
RoHS: Yes
Other Names:
2MBI100S120, 2MBI100S 120