Datasheet 2MBI100S-120 - Fuji Electric IGBT MODULE, 1200 V, 100 A

Fuji Electric 2MBI100S-120

Part Number: 2MBI100S-120

Detailed Description

Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 100 A

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Docket:
Fuji Semiconductor, Inc.

- P.O. Box 702708 - Dallas, TX - (972) 733-1700 - www.fujisemiconductor.com

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.6 V
  • Current Ic @ Vce Sat: 75 A
  • Current Ic Continuous a Max: 100 A
  • Current Temperature: 25°C
  • DC Collector Current: 100 A
  • External Depth: 62 mm
  • External Length / Height: 30 mm
  • External Width: 108 mm
  • Fall Time tf: 300 ns
  • Full Power Rating Temperature: 25°C
  • Isolation Voltage: 2.5kV
  • Junction Temperature Tj Max: 150°C
  • Module Configuration: Dual
  • Mounting Type: Screw
  • Number of Pins: 7
  • Number of Transistors: 2
  • Package / Case: M234
  • Power Dissipation Max: 690 W
  • Power Dissipation Pd: 780 W
  • Power Dissipation: 780 W
  • Pulsed Current Icm: 300 A
  • Rise Time: 600 ns
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 1.2kV
  • Weight: 0.4kg

RoHS: Yes

Other Names:

2MBI100S120, 2MBI100S 120