Datasheet 6MBI75S-120-50 - Fuji Electric 6-PACK IGBT MODULE 75 A 1200 V NPT

Detailed Description

Manufacturer: Fuji Electric

Description: 6-PACK IGBT MODULE 75 A 1200 V NPT

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Docket:
IGBT MODULE
(RoHS compliant product)
6MBI75S-120-50 MS5F 6104
Apr.

26 `05
K.Muramatsu

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 2.6 V
• Current Ic @ Vce Sat: 75 A
• Current Ic Continuous a Max: 100 A
• Current Temperature: 25°C
• DC Collector Current: 75 A
• External Depth: 62 mm
• External Length / Height: 20 mm
• External Width: 122 mm
• Fall Time tf: 450 ns
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5kV
• Junction Temperature Tj Max: 150°C
• Module Configuration: Six
• Mounting Type: Screw
• Number of Pins: 21
• Number of Transistors: 6
• Package / Case: M626
• Power Dissipation Pd: 520 W
• Power Dissipation: 520 W
• Pulsed Current Icm: 200 A
• Rise Time: 350 ns
• Transistor Case Style: Module
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2kV

RoHS: Yes

Other Names:

6MBI75S12050, 6MBI75S 120 50