Datasheet GA100XCP12-227 - Genesic Semiconductor IGBT SILICON CARBIDE (SiC) DIODE COPACK, 1200 V, 100 A, SOT-227

Genesic Semiconductor GA100XCP12-227

Part Number: GA100XCP12-227

Detailed Description

Manufacturer: Genesic Semiconductor

Description: IGBT SILICON CARBIDE (SiC) DIODE COPACK, 1200 V, 100 A, SOT-227

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Specifications:

  • Collector Emitter Voltage Vces: 1200 V
  • DC Collector Current: 100 A
  • Number of Pins: 3
  • Operating Temperature Range: -40°C to +150°C
  • Transistor Type: IGBT
  • RoHS: Yes

Other Names:

GA100XCP12227, GA100XCP12 227

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