Datasheet IKW40N120H3 - Infineon IGBT+ DIODE, 1200 V, 40 A, TO247

Detailed Description

Manufacturer: Infineon

Description: IGBT+ DIODE, 1200 V, 40 A, TO247

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Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.4 V
• DC Collector Current: 40 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +175°C
• Power Dissipation Max: 483 W
• Transistor Case Style: TO-247

RoHS: Yes

Accessories:

• AAVID THERMALLOY - BW50-2G
• Semikron - SKM40GD123D