Datasheet BCW66HTA - Diodes TRANSISTOR, NPN, 45 V, SOT-23

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, 45 V, SOT-23

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Docket:
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001 PARTMARKING DETAILS ­ BCW66F ­ EF BCW66G ­ EG BCW66H ­ EH BCW66FR ­ BCW66GR ­ BCW66HR ­ 7P 5T 7M
BCW66
E
C B

Specifications:

• Collector Emitter Voltage V(br)ceo: 45 V
• Collector Emitter Voltage Vces: 2 V
• Continuous Collector Current Ic Max: 800 mA
• Current Ib: 100 mA
• Current Ic Continuous a Max: 500 mA
• Current Ic hFE: 100 mA
• DC Collector Current: 500 mA
• DC Current Gain hFE: 350
• Gain Bandwidth ft Typ: 100 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150пїЅпїЅC
• Package / Case: SOT-23
• Power Dissipation Pd: 330 mW
• Power Dissipation Ptot Max: 330 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Turn Off Time: 400 ns
• Turn On Time: 100 ns
• Voltage Vcbo: 75 V

RoHS: Yes

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