Datasheet FMMT495 - Diodes TRANSISTOR, NPN, SOT-23

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL 7 495
FMMT495
E
C B

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 150 V
• Collector Emitter Voltage Vces: 200 mV
• Continuous Collector Current Ic Max: 1 A
• Current Ic Continuous a Max: 1 A
• Current Ic hFE: 250 mA
• DC Collector Current: 1 A
• DC Current Gain hFE: 100
• Gain Bandwidth ft Min: 100 MHz
• Gain Bandwidth ft Typ: 100 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 500 mW
• Power Dissipation Ptot Max: 500 mW
• SMD Marking: 495
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 170 V

RoHS: Yes

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