Datasheet ZXT13N50DE6 - Diodes TRANSISTOR, NPN, SOT23-6

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT23-6

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Docket:
ZXT13N50DE6
SuperSOT4TM 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications. FEATURES · · · · · · · · · Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=4A Continuous Collector Current SOT23-6 package
SOT23-6

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 12 mV
• Continuous Collector Current Ic Max: 10 A
• Current Ic @ Vce Sat: 100 mA
• Current Ic Continuous a Max: 4 A
• Current Ic Typ: 5 A
• Current Ic hFE: 1 mA
• DC Collector Current: 4 A
• DC Current Gain hFE: 450
• Device Marking: ZXT13N50DE6
• Gain Bandwidth ft Typ: 115 MHz
• Hfe Min: 300
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 1.1 W
• Power Dissipation Ptot Max: 1.1 W
• SMD Marking: N50D
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 100 V

RoHS: Yes