Datasheet NTE272 - NTE Electronics DARLINGTON TRANSISTOR, NPN, 40 V

Detailed Description

Manufacturer: NTE Electronics

Description: DARLINGTON TRANSISTOR, NPN, 40 V

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Docket:
NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers
Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Features: D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector-Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector-Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• DC Collector Current: 2 A
• DC Current Gain Max (hfe): 65000
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1 W
• Transistor Polarity: NPN

Accessories:

• WAKEFIELD SOLUTIONS - 289-AB