Datasheet NTE392 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 100 V, TO-218

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 100 V, TO-218

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NTE392 (NPN) & NTE393 (PNP) Silicon Complementary Transistors General Purpose
Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 25 A
• DC Current Gain Max (hfe): 75
• Power Dissipation Pd: 125 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 3 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB