Datasheet NTE99 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 400 V, TO-3

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 400 V, TO-3

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Docket:
NTE99 Silicon NPN Transistor Darlington w/Base­Emitter Speed­up Diode
Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high­voltage, high­speed, power switching in inductive circuits where fall time is critical.

This device is particularly suited for line­operated switchmode applications. Applications: D Switching Regulators D Motor Controls D Inverters D Solenoid and Relay Drivers Features: D Fast Turn­Off Times: 1.0µs (max) Inductive Crossover Time ­ 20 Amps 2.5µs (max) Inductive Storage Time ­ 20 Amps D Operating Temperature Range: ­65° to +200°C Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector­Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 400 V
• DC Collector Current: 50 A
• DC Current Gain Max (hfe): 25
• Operating Temperature Range: -65°C to +200°C
• Power Dissipation Pd: 250 W
• Transistor Polarity: NPN

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 403K