Datasheet PBHV8118T - NXP TRANSISTOR, NPN, 1 A, 180 V, SOT23

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, 1 A, 180 V, SOT23

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Docket:
PBHV8118T
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev.

01 -- 7 May 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: 180 V
• DC Collector Current: 1 A
• DC Current Gain: 250
• Gain Bandwidth ft Typ: 30 MHz
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 300 mW
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 30 MHz
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)