Datasheet PBSS8110Y,115 - NXP BISS TRANSISTOR, NPN, 100 V, 1 A, 6-SOT-363
Part Number: PBSS8110Y,115
Detailed Description
Manufacturer: NXP
Description: BISS TRANSISTOR, NPN, 100 V, 1 A, 6-SOT-363
Docket:
PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev.
02 -- 21 November 2009 Product data sheet
1. Product profile
1.1 General description
Specifications:
- Collector Emitter Voltage V(br)ceo: 100 V
- DC Collector Current: 1 A
- DC Current Gain Max (hfe): 150
- Power Dissipation Pd: 290 mW
- Transistor Polarity: NPN
- Transition Frequency Typ ft: 100 MHz
RoHS: Yes
Other Names:
PBSS8110Y115, PBSS8110Y 115