Datasheet MJF18004G - ON Semiconductor TRANSISTOR, NPN, ISOWATT-220

Detailed Description

Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN, ISOWATT-220

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Docket:
MJE18004G, MJF18004G SWITCHMODEt
NPN Bipolar Power Transistor For Switching Power Supply Applications
The MJE/MJF18004G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts.
Features
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Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 450 V
• Collector Emitter Voltage Vces: 1.1 V
• Continuous Collector Current Ic Max: 5 A
• Current Ic @ Vce Sat: 1 A
• Current Ic Continuous a Max: 5 A
• DC Collector Current: 5 A
• DC Current Gain Min: 12
• DC Current Gain: 1 mA
• Fall Time @ Ic: 0.4 µs
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 13 MHz
• Isolation Voltage: 2 kV
• Lead Spacing: 2.54 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: ISOWATT-220
• Power Dissipation Pd: 35 W
• Power Dissipation Ptot Max: 35 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: ISOWATT-220
• Transistor Polarity: NPN
• Voltage Vcbo: 10 V DC
• Voltage Vces: 1 kV

RoHS: Yes