Datasheet 2N6491G - ON Semiconductor BIPOLAR TRANSISTOR

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR

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Docket:
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
2N6488 and 2N6491 are Preferred Devices
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general-purpose amplifier and switching applications.
Features http://onsemi.com

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 80 V
• Collector Emitter Voltage Vces: 20 V
• DC Collector Current: -15 A
• DC Current Gain Min: 150
• DC Current Gain: 5
• Gain Bandwidth ft Typ: 5 MHz
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: 3-TO-220
• Power Dissipation Pd: 1.8 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-220
• Transistor Polarity: PNP

RoHS: Yes