Datasheet 2N6520RLRAG - ON Semiconductor BIPOLAR TRANSISTOR, PNP -350 V TO-92

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, PNP -350 V TO-92

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Docket:
NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors
NPN and PNP
Features http://onsemi.com
COLLECTOR 3 2 BASE Symbol VCEO 250 350 VCBO 2N6515 2N6517, 2N6520 Emitter - Base Voltage 2N6515, 2N6517 2N6520 Base Current Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range IB IC PD PD TJ, Tstg VEBO 6.0 5.0 250 500 625 5.0 1.5 12 -55 to +150 mAdc mAdc mW mW/°C W mW/°C °C TO-92 CASE 29 STYLE 1 12 1 250 350 Vdc Vdc 1 EMITTER 2N6515 2N6517, 2N6520 Collector - Base Voltage Value Unit Vdc NPN 1 EMITTER COLLECTOR 3 2 BASE PNP
· Voltage and Current are Negative for PNP Transistors · These are Pb-Free Devices*

Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• DC Collector Current: 500 mA
• DC Current Gain Max (hfe): 40
• Power Dissipation Pd: 625 mW
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 200 MHz

RoHS: Yes