Datasheet STTH102 (STMicroelectronics) - 4
| Manufacturer | STMicroelectronics |
| Description | High efficiency ultrafast diode |
| Pages / Page | 7 / 4 — Characteristics. STTH102. Figure 9 |
| File Format / Size | PDF / 105 Kb |
| Document Language | English |
Characteristics. STTH102. Figure 9
Model Line for this Datasheet
Text Version of Document
Characteristics STTH102 Figure 9. Reverse recovery time versus dIF/dt Figure 10. Peak recovery current versus dIF/dt (90% confidence) (90% confidence) t (ns) rr I (A) RM
70 3.5 I =1A I =1A F F V VR=100V R=100V 60 T 3.0 Tj=125°C j=125°C 50 2.5 40 2.0 T =125°C j T =125°C j 30 1.5 Tj=25°C 20 1.0 T =25°C j 10 0.5
dIF/dt(A/µs) dIF/dt(A/µs)
0 0.0 1 10 100 1000 1 10 100 1000
Figure 11. Reverse recovery charges versus Figure 12. Relative variations of dynamic dIF/dt (90% confidence) parameters versus junction temperature Q (nC) rr I ; RM t ; rr Qrr [Tj ] / I ; RM t ; rr Qrr [Tj =25°C]
35.0 3.5 32.5 I =1A F I = F IF(AV) VR=100V dIF/dt=200A/µs 30.0 VR=100V 27.5 3.0 25.0 22.5 QRR 2.5 20.0 T =125°C j 17.5 15.0 2.0 12.5 trr 10.0 Tj=25°C 7.5 1.5 I 5.0 RM 2.5
dIF/dt(A/µs) Tj(°C)
0.0 1.0 1 10 100 1000 25 50 75 100 125 150 175
Figure 13. Thermal resistance junction to Figure 14. Thermal resistance versus ambient versus copper surface lead length (DO-41) under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Rth(j-a)(°C/W) R (°C/W) th
120 120 110 110 Rth(j-a) 100 100 90 90 80 80 70 70 60 60 50 50 Rth(j-I) 40 40 30 30 20 20 10
S(cm²)
10
Lleads(mm)
0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 10 15 20 25 4/7 Document Outline STTH102 High efficiency ultrafast diode Table 1. Absolute ratings (limiting values) 1 Characteristics Table 2. Thermal resistance Table 3. Static Electrical Characteristics Table 4. Dynamic electrical characteristics Figure 1. Average forward power dissipation versus average forward current (SMA) Figure 2. Average forward power dissipation versus average forward current (DO-41) Figure 3. Average forward current versus ambient temperature (d = 0.5) (SMA) Figure 4. Average forward current versus ambient temperature (d = 0.5) (DO-41) Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Figure 7. Forward voltage drop versus forward current Figure 8. Junction capacitance versus reverse voltage applied (typical values) Figure 9. Reverse recovery time versus dIF/dt (90% confidence) Figure 10. Peak recovery current versus dIF/dt (90% confidence) Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Figure 12. Relative variations of dynamic parameters versus junction temperature Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Figure 14. Thermal resistance versus lead length (DO-41) 2 Package information Table 5. SMA Dimensions Figure 15. Footprint (dimensions in mm) Table 6. DO-41 (Plastic) Package dimensions 3 Ordering information 4 Revision history
70 3.5 I =1A I =1A F F V VR=100V R=100V 60 T 3.0 Tj=125°C j=125°C 50 2.5 40 2.0 T =125°C j T =125°C j 30 1.5 Tj=25°C 20 1.0 T =25°C j 10 0.5
dIF/dt(A/µs) dIF/dt(A/µs)
0 0.0 1 10 100 1000 1 10 100 1000
Figure 11. Reverse recovery charges versus Figure 12. Relative variations of dynamic dIF/dt (90% confidence) parameters versus junction temperature Q (nC) rr I ; RM t ; rr Qrr [Tj ] / I ; RM t ; rr Qrr [Tj =25°C]
35.0 3.5 32.5 I =1A F I = F IF(AV) VR=100V dIF/dt=200A/µs 30.0 VR=100V 27.5 3.0 25.0 22.5 QRR 2.5 20.0 T =125°C j 17.5 15.0 2.0 12.5 trr 10.0 Tj=25°C 7.5 1.5 I 5.0 RM 2.5
dIF/dt(A/µs) Tj(°C)
0.0 1.0 1 10 100 1000 25 50 75 100 125 150 175
Figure 13. Thermal resistance junction to Figure 14. Thermal resistance versus ambient versus copper surface lead length (DO-41) under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Rth(j-a)(°C/W) R (°C/W) th
120 120 110 110 Rth(j-a) 100 100 90 90 80 80 70 70 60 60 50 50 Rth(j-I) 40 40 30 30 20 20 10
S(cm²)
10
Lleads(mm)
0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 10 15 20 25 4/7 Document Outline STTH102 High efficiency ultrafast diode Table 1. Absolute ratings (limiting values) 1 Characteristics Table 2. Thermal resistance Table 3. Static Electrical Characteristics Table 4. Dynamic electrical characteristics Figure 1. Average forward power dissipation versus average forward current (SMA) Figure 2. Average forward power dissipation versus average forward current (DO-41) Figure 3. Average forward current versus ambient temperature (d = 0.5) (SMA) Figure 4. Average forward current versus ambient temperature (d = 0.5) (DO-41) Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Figure 7. Forward voltage drop versus forward current Figure 8. Junction capacitance versus reverse voltage applied (typical values) Figure 9. Reverse recovery time versus dIF/dt (90% confidence) Figure 10. Peak recovery current versus dIF/dt (90% confidence) Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Figure 12. Relative variations of dynamic parameters versus junction temperature Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Figure 14. Thermal resistance versus lead length (DO-41) 2 Package information Table 5. SMA Dimensions Figure 15. Footprint (dimensions in mm) Table 6. DO-41 (Plastic) Package dimensions 3 Ordering information 4 Revision history
