Datasheet AD8682, AD8684 (Analog Devices) - 3

AD8682/AD8684 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VS = ±15.0 V, TA = 25°C, VCM = 0 V, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0.35 1 mV AD8682 +25°C ≤ TA ≤ +85°C 2.5 mV −40°C ≤ TA ≤ +25°C 3 mV AD8684 +25°C ≤ TA ≤ +85°C 3.5 mV −40°C ≤ TA ≤ +25°C 4 mV Input Bias Current IB 6 20 pA −40°C ≤ TA ≤ +85°C 125 pA Input Offset Current IOS 20 pA −40°C ≤ TA ≤ +85°C 100 pA Input Voltage Range −11 +15 V Common-Mode Rejection Ratio CMRR −11 V ≤ VCM ≤ +15 V, −40°C ≤ TA ≤ +85°C 70 90 dB Large Signal Voltage Gain AVO RL = 10 kΩ 20 V/mV RL = 10 kΩ, −40°C ≤ TA ≤ +85°C 15 V/mV Offset Voltage Drift ΔVOS/ΔT 10 μV/°C Bias Current Drift ΔIB/ΔT 8 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ 13.5 13.9 V Output Voltage Low VOL RL = 10 kΩ −13.9 −13.5 V Short-Circuit Limit ISC Source 3 10 mA Sink −12 −8 mA Open-Loop Output Impedance ZOUT f = 1 MHz 200 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V, −40°C ≤ TA ≤ +85°C 92 114 dB Supply Current/Amplifier ISY VO = 0 V, −40°C ≤ TA ≤ +85°C 210 250 μA Supply Voltage Range VS ±4.5 ±18 V DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 7 9 V/μs Full-Power Bandwidth BWP 1% distortion 125 kHz Settling Time tS To 0.01% 1.6 μs Gain Bandwidth Product GBP 3.5 MHz Phase Margin ØM 55 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 1.3 μV p-p Voltage Noise Density en f = 1 kHz 36 nV/√Hz Current Noise Density in 0.01 pA/√Hz Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION HIGH-SIDE SIGNAL CONDITIONING PHASE INVERSION ACTIVE FILTERS PROGRAMMABLE STATE VARIABLE FILTER OUTLINE DIMENSIONS ORDERING GUIDE