Datasheet LTC1408 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 6 Channel, 14-Bit, 600ksps Simultaneous Sampling ADC with Shutdown |
| Pages / Page | 20 / 3 — DY A IC ACCURACY The. denotes the specifications which apply over the … |
| File Format / Size | PDF / 513 Kb |
| Document Language | English |
DY A IC ACCURACY The. denotes the specifications which apply over the full operating temperature range,
Model Line for this Datasheet
Text Version of Document
LTC1408
U W DY A IC ACCURACY The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. With internal reference, VDD = 3V, VDD = VCC = 3V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
SINAD Signal-to-Noise Plus 100kHz Input Signal ● 73 76 dB Distortion Ratio 300kHz Input Signal 76 dB 100kHz Input Signal, External VREF = 3.3V, VDD ≥ 3.3V 79 dB 300kHz Input Signal, External VREF = 3.3V, VDD ≥ 3.3V 79 dB THD Total Harmonic 100kHz First 5 Harmonics ● –80 –90 dB Distortion 300kHz First 5 Harmonics –86 dB SFDR Spurious Free 100kHz Input Signal 90 dB Dynamic Range 300kHz Input Signal 86 dB IMD Intermodulation 0.625VP-P, 833kHz into CH0+, 0.625VP-P, 841kHz into CH0–. –80 dB Distortion Bipolar Mode. Also Applicable to Other Channels Code-to-Code VREF = 2.5V (Note 17) 0.7 LSBRMS Transition Noise Full Power Bandwidth VIN = 2.5VP-P, SDO = 11585LSBP-P (–3dBFS) (Note 15) 50 MHz Full Linear Bandwidth S/(N + D) ≥ 68dB, Bipolar Differential Input 5 MHz
U U U I TER AL REFERE CE CHARACTERISTICS TA = 25
°
C. VDD = VCC = 3V. PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.5 V VREF Output Tempco 15 ppm/°C VREF Line Regulation VDD = 2.7V to 3.6V, VREF = 2.5V 600 µV/V VREF Output Resistance Load Current = 0.5mA 0.2 Ω VREF Settling Time 2 ms
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VDD = VCC = 3V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 3.3V ● 2.4 V VIL Low Level Input Voltage VDD = 2.7V ● 0.6 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 3V, IOUT = – 200µA ● 2.5 2.9 V VOL Low Level Output Voltage VDD = 2.7V, IOUT = 160µA 0.05 V VDD = 2.7V, IOUT = 1.6mA ● 0.4 V IOZ Hi-Z Output Leakage DOUT VOUT = 0V and VDD ● ±10 µA COZ Hi-Z Output Capacitance DOUT 1 pF ISOURCE Output Short-Circuit Source Current VOUT = 0V, VDD = 3V 20 mA ISINK Output Short-Circuit Sink Current VOUT = VDD = 3V 15 mA 1408fa 3
U W DY A IC ACCURACY The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. With internal reference, VDD = 3V, VDD = VCC = 3V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
SINAD Signal-to-Noise Plus 100kHz Input Signal ● 73 76 dB Distortion Ratio 300kHz Input Signal 76 dB 100kHz Input Signal, External VREF = 3.3V, VDD ≥ 3.3V 79 dB 300kHz Input Signal, External VREF = 3.3V, VDD ≥ 3.3V 79 dB THD Total Harmonic 100kHz First 5 Harmonics ● –80 –90 dB Distortion 300kHz First 5 Harmonics –86 dB SFDR Spurious Free 100kHz Input Signal 90 dB Dynamic Range 300kHz Input Signal 86 dB IMD Intermodulation 0.625VP-P, 833kHz into CH0+, 0.625VP-P, 841kHz into CH0–. –80 dB Distortion Bipolar Mode. Also Applicable to Other Channels Code-to-Code VREF = 2.5V (Note 17) 0.7 LSBRMS Transition Noise Full Power Bandwidth VIN = 2.5VP-P, SDO = 11585LSBP-P (–3dBFS) (Note 15) 50 MHz Full Linear Bandwidth S/(N + D) ≥ 68dB, Bipolar Differential Input 5 MHz
U U U I TER AL REFERE CE CHARACTERISTICS TA = 25
°
C. VDD = VCC = 3V. PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.5 V VREF Output Tempco 15 ppm/°C VREF Line Regulation VDD = 2.7V to 3.6V, VREF = 2.5V 600 µV/V VREF Output Resistance Load Current = 0.5mA 0.2 Ω VREF Settling Time 2 ms
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VDD = VCC = 3V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 3.3V ● 2.4 V VIL Low Level Input Voltage VDD = 2.7V ● 0.6 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 3V, IOUT = – 200µA ● 2.5 2.9 V VOL Low Level Output Voltage VDD = 2.7V, IOUT = 160µA 0.05 V VDD = 2.7V, IOUT = 1.6mA ● 0.4 V IOZ Hi-Z Output Leakage DOUT VOUT = 0V and VDD ● ±10 µA COZ Hi-Z Output Capacitance DOUT 1 pF ISOURCE Output Short-Circuit Source Current VOUT = 0V, VDD = 3V 20 mA ISINK Output Short-Circuit Sink Current VOUT = VDD = 3V 15 mA 1408fa 3
