Datasheet IRF520, SiHF520 (Vishay) - 2
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 9 / 2 — IRF520, SiHF520. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. MAX. … |
| File Format / Size | PDF / 283 Kb |
| Document Language | English |
IRF520, SiHF520. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. TEST. CONDITIONS MIN. Static. Dynamic
Text Version of Document
IRF520, SiHF520
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W Maximum Junction-to-Case (Drain) RthJC - 2.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.5 Ab - - 0.27 Forward Transconductance gfs VDS = 50 V, ID = 5.5 Ab 2.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 360 - Output Capacitance Coss VDS = 25 V, - 150 - pF Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 34 - Total Gate Charge Qg - - 16 ID = 9.2 A, VDS = 80 V, Gate-Source Charge Qgs VGS = 10 V - - 4.4 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 7.7 Turn-On Delay Time td(on) - 8.8 - Rise Time tr V - 30 - DD = 50 V, ID = 9.2 A, ns Turn-Off Delay Time td(off) R - 19 - g = 18 , RD = 5.2, see fig. 10b Fall Time tf - 20 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 9.2 showing the G A integral reverse Pulsed Diode Forward Currenta ISM S - - 37 p - n junction diode Body Diode Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time trr - 110 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.53 1.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com Document Number: 91017 2 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W Maximum Junction-to-Case (Drain) RthJC - 2.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.5 Ab - - 0.27 Forward Transconductance gfs VDS = 50 V, ID = 5.5 Ab 2.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 360 - Output Capacitance Coss VDS = 25 V, - 150 - pF Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 34 - Total Gate Charge Qg - - 16 ID = 9.2 A, VDS = 80 V, Gate-Source Charge Qgs VGS = 10 V - - 4.4 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 7.7 Turn-On Delay Time td(on) - 8.8 - Rise Time tr V - 30 - DD = 50 V, ID = 9.2 A, ns Turn-Off Delay Time td(off) R - 19 - g = 18 , RD = 5.2, see fig. 10b Fall Time tf - 20 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 9.2 showing the G A integral reverse Pulsed Diode Forward Currenta ISM S - - 37 p - n junction diode Body Diode Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time trr - 110 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.53 1.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com Document Number: 91017 2 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
