Datasheet DN2535 (Microchip)
| Manufacturer | Microchip |
| Description | N-Channel Depletion-Mode Vertical DMOS FETs Features |
| Pages / Page | 6 / 1 — Supertex inc. DN2535. N-Channel Depletion-Mode. Vertical DMOS FETs. … |
| File Format / Size | PDF / 772 Kb |
| Document Language | English |
Supertex inc. DN2535. N-Channel Depletion-Mode. Vertical DMOS FETs. Features. General Description. Applications. Ordering Information
Model Line for this Datasheet
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Supertex inc. DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description
► High input impedance The Supertex DN2535 is a low threshold depletion mode ► Low input capacitance (normally-on) transistor utilizing an advanced vertical ► Fast switching speeds DMOS structure and Supertex’s well-proven silicon-gate ► Low on-resistance manufacturing process. This combination produces a device ► Free from secondary breakdown with the power handling capabilities of bipolar transistors ► Low input and output leakage and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all
Applications
MOS structures, this device is free from thermal runaway and ► Normally-on switches thermally-induced secondary breakdown. ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Linear amplifiers high breakdown voltage, high input impedance, low input ► Constant current sources capacitance, and fast switching speeds are desired. ► Power supply circuits ► Telecom
Ordering Information Product Summary Part Number Package Option Packing R I BV /BV DS(ON) DSS
DN2535N3-G TO-92 1000/Bag
DSX DGX (max) (min)
DN2535N3-G P002 350V 25Ω 150mA DN2535N3-G P003
Pin Configuration
DN2535N3-G P005 TO-92 2000/Reel
DRAIN
DN2535N3-G P013 DN2535N3-G P014 DN2535N5-G TO-220 50/Tube
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity.
SOURCE SOURCE
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
GATE Absolute Maximum Ratings GATE DRAIN Parameter Value 3-Lead TO-92 3-Lead TO-220
Drain-to-source voltage BVDSX
Product Marking
Drain-to-gate voltage BVDGX
SiDN
YY = Year Sealed Gate-to-source voltage ±20V
2 5 3 5
WW = Week Sealed
Y Y W W
= “Green” Packaging Operating and storage temperature -55OC to +150OC Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device
3-Lead TO-92
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All L = Lot Number voltages are referenced to device ground. YY = Year Sealed
DN2535N5 LLLLLLLLL
WW = Week Sealed
YYWW
= “Green” Packaging
Typical Thermal Resistance
Package may or may not include the following marks: Si or
Package θja
TO-92 132OC/W
3-Lead TO-220
TO-220 29OC/W Doc.# DSFP-DN2535
Supertex inc.
B062813
www.supertex.com
► High input impedance The Supertex DN2535 is a low threshold depletion mode ► Low input capacitance (normally-on) transistor utilizing an advanced vertical ► Fast switching speeds DMOS structure and Supertex’s well-proven silicon-gate ► Low on-resistance manufacturing process. This combination produces a device ► Free from secondary breakdown with the power handling capabilities of bipolar transistors ► Low input and output leakage and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all
Applications
MOS structures, this device is free from thermal runaway and ► Normally-on switches thermally-induced secondary breakdown. ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Linear amplifiers high breakdown voltage, high input impedance, low input ► Constant current sources capacitance, and fast switching speeds are desired. ► Power supply circuits ► Telecom
Ordering Information Product Summary Part Number Package Option Packing R I BV /BV DS(ON) DSS
DN2535N3-G TO-92 1000/Bag
DSX DGX (max) (min)
DN2535N3-G P002 350V 25Ω 150mA DN2535N3-G P003
Pin Configuration
DN2535N3-G P005 TO-92 2000/Reel
DRAIN
DN2535N3-G P013 DN2535N3-G P014 DN2535N5-G TO-220 50/Tube
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity.
SOURCE SOURCE
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
GATE Absolute Maximum Ratings GATE DRAIN Parameter Value 3-Lead TO-92 3-Lead TO-220
Drain-to-source voltage BVDSX
Product Marking
Drain-to-gate voltage BVDGX
SiDN
YY = Year Sealed Gate-to-source voltage ±20V
2 5 3 5
WW = Week Sealed
Y Y W W
= “Green” Packaging Operating and storage temperature -55OC to +150OC Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device
3-Lead TO-92
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All L = Lot Number voltages are referenced to device ground. YY = Year Sealed
DN2535N5 LLLLLLLLL
WW = Week Sealed
YYWW
= “Green” Packaging
Typical Thermal Resistance
Package may or may not include the following marks: Si or
Package θja
TO-92 132OC/W
3-Lead TO-220
TO-220 29OC/W Doc.# DSFP-DN2535
Supertex inc.
B062813
www.supertex.com
