Datasheet DN3545 (Microchip)

ManufacturerMicrochip
DescriptionN-Channel Depletion-Mode Vertical DMOS FET Features
Pages / Page6 / 1 — Supertex inc. DN3545. N-Channel Depletion-Mode. Vertical DMOS FET. …
Revision06-27-2014
File Format / SizePDF / 849 Kb
Document LanguageEnglish

Supertex inc. DN3545. N-Channel Depletion-Mode. Vertical DMOS FET. Features. General Description. Applications. Ordering Information

Datasheet DN3545 Microchip, Revision: 06-27-2014

Text Version of Document

Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description
► High input impedance These depletion-mode (normally-on) transistors utilize an ► Low input capacitance advanced vertical DMOS structure and Supertex’s well-proven ► Fast switching speeds silicon-gate manufacturing process. This combination produces ► Low on-resistance devices with the power handling capabilities of bipolar transistors ► Free from secondary breakdown and with the high input impedance and positive temperature ► Low input and output leakage coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and
Applications
thermally-induced secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a wide range ► Converters of switching and amplifying applications where high breakdown ► Linear amplifiers voltage, high input impedance, low input capacitance, and fast ► Constant current sources switching speeds are desired. ► Power supply circuits ► Telecom
Ordering Information Product Summary Part Number Package Options Packing BV /BV R DSX DGX DS(ON) (max) IDSS (min)
SN3545N3-G TO-92 1000/Bag 450V 20Ω 200mA SN3545N3-G P002 TO-92 2000/Reel
Pin Configuration
SN3545N3-G P003 TO-92 2000/Reel SN3545N3-G P005 TO-92 2000/Reel
DRAIN
SN3545N3-G P013 TO-92 2000/Reel
DRAIN SOURCE
SN3545N3-G P014 TO-92 2000/Reel
SOURCE DRAIN
SN3545N8-G TO-243AA (SOT-89) 2000/Reel
GATE GATE
-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity.
TO-92 TO-243AA (SOT-89)
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping
Product Marking
Specifications and Winding Styles
Absolute Maximum Ratings SiDN
YY = Year Sealed
3 5 4 5
WW = Week Sealed
Parameter Value Y Y W W
= “Green” Packaging Drain-to-source voltage BV Package may or may not include the following marks: Si or DSX Drain-to-gate voltage BV
TO-92
DGX Gate-to-source voltage ±20V
DN5MW
W = Code for week sealed = “Green” Packaging Operating and storage temperature -55OC to +150OC Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device may
TO-243AA (SOT-89)
occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Typical Thermal Resistance Package θja
TO-92 132OC/W TO-243AA (SOT-89) 133OC/W Doc.# DSFP-DN3545
Supertex inc.
C070113
www.supertex.com
EMS supplier