Datasheet Si4435BDY (Vishay)
| Manufacturer | Vishay |
| Description | P-Channel 30-V (D-S) MOSFET |
| Pages / Page | 6 / 1 — Si4435BDY. P-Channel 30-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. … |
| File Format / Size | PDF / 90 Kb |
| Document Language | English |
Si4435BDY. P-Channel 30-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V). RDS(on) (
Model Line for this Datasheet
Text Version of Document
Si4435BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Definition
0.020 at VGS = - 10 V - 9.1 • TrenchFET® Power MOSFET - 30 0.035 at V • Advanced High Cell Density Process GS = - 4.5 V - 6.9 • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches • Battery Switch
SO-8
S S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View D
Ordering Information:
Si4435BDY-T1-E3 (Lead (Pb)-free) Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 TA = 25 °C - 9.1 - 7 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C - 7.3 - 5.6 A Pulsed Drain Current IDM - 50 Continuous Diode Current (Diode Conduction)a IS - 2.1 - 1.25 TA = 25 °C 2.5 1.5 Maximum Power Dissipationa PD W TA = 70 °C 1.6 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 10 s 40 50 Maximum Junction-to-Ambienta RthJA Steady State 70 85 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72123 www.vishay.com S09-0767-Rev. D, 04-May-09 1
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Definition
0.020 at VGS = - 10 V - 9.1 • TrenchFET® Power MOSFET - 30 0.035 at V • Advanced High Cell Density Process GS = - 4.5 V - 6.9 • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches • Battery Switch
SO-8
S S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View D
Ordering Information:
Si4435BDY-T1-E3 (Lead (Pb)-free) Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 TA = 25 °C - 9.1 - 7 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C - 7.3 - 5.6 A Pulsed Drain Current IDM - 50 Continuous Diode Current (Diode Conduction)a IS - 2.1 - 1.25 TA = 25 °C 2.5 1.5 Maximum Power Dissipationa PD W TA = 70 °C 1.6 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 10 s 40 50 Maximum Junction-to-Ambienta RthJA Steady State 70 85 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72123 www.vishay.com S09-0767-Rev. D, 04-May-09 1
