Datasheet IRF3205PbF (Infineon) - 5
| Manufacturer | Infineon |
| Description | HEXFET Power MOSFET |
| Pages / Page | 8 / 5 — Fig 10a. Fig. 10a. Fig 9. Fig 10b. Fig 11 |
| File Format / Size | PDF / 221 Kb |
| Document Language | English |
Fig 10a. Fig. 10a. Fig 9. Fig 10b. Fig 11
Model Line for this Datasheet
Text Version of Document
IRF3205PbF RD 120 VDS LIMITED BY PACKAGE VGS V D.U.T. 100 RG + ) A -VDD ( 80 10V urrent Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 n C rai D
Fig 10a. Fig 10a.
Switching T Switching ime T Test ime Circuit Test 40 I , D VDS V 90% 20 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) 10% C VGS V td(on) t trt td(of d( f of )f tft
Fig 9. Fig 9.
Maximum
Drain Maximum Current Drain Vs. Current
Fig 10b.
Switching Time Waveforms Case Temperature Case 1 D = 0.50 thJC(Z )e 0.20 0.1 0.10 espons P 0.05 DM mal R SINGLE PULSE t1 0.02 (THERMAL RESPONSE) 0.01 t2 Ther Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ=P DMx ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11. Fig
Maximum Effective Maximum Transient Effective Thermal Transient I Thermal mpedance, I Junction-to-Case mpedance, www.irf.com 5
Fig 10a. Fig 10a.
Switching T Switching ime T Test ime Circuit Test 40 I , D VDS V 90% 20 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) 10% C VGS V td(on) t trt td(of d( f of )f tft
Fig 9. Fig 9.
Maximum
Drain Maximum Current Drain Vs. Current
Fig 10b.
Switching Time Waveforms Case Temperature Case 1 D = 0.50 thJC(Z )e 0.20 0.1 0.10 espons P 0.05 DM mal R SINGLE PULSE t1 0.02 (THERMAL RESPONSE) 0.01 t2 Ther Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ=P DMx ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11. Fig
Maximum Effective Maximum Transient Effective Thermal Transient I Thermal mpedance, I Junction-to-Case mpedance, www.irf.com 5
