Datasheet LTC4001 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 2A Synchronous Buck Li-Ion Charger |
| Pages / Page | 20 / 3 — ELECTRICAL CHARACTERISTICS. The |
| File Format / Size | PDF / 241 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. The
Model Line for this Datasheet
Text Version of Document
LTC4001
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VIN = 5V, VEN = 0V, RPROG = 549
Ω
, RIDET = 549
Ω
, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tTIMER Timer Accuracy CTIMER = 0.22µF ±10 % VEN Enable Input Threshold Voltage VEN Rising 0.6 0.8 1 V ∆VEN Enable Input Hysteresis 100 mV VPROG PROG Pin Voltage RPROG = 549Ω 1.213 V VIDET IDET Pin Voltage RIDET = 549Ω 1.213 V IIDET IDET Threshold RIDET = 549Ω 150 200 250 mA ICHRG CHRG Pin Weak Pull-Down Current VCHRG = 1V 15 30 50 µA VCHRG CHRG Pin Output Low Voltage ICHRG = 5mA 0.2 0.4 V VOL FAULT Pin Output Low Voltage 1mA Load 0.4 V VOH FAULT Pin Output High Voltage 1mA Load 4.6 V VRECHRG Recharge Battery Threshold Voltage VFLOAT – VRECHRG VBAT Falling 50 100 135 mV tRB Recharge Filter Time Constant 4 ms tRECHRG Recharge Time Percent of Total Charge Time 50 % tTRIKL Low-Battery Trickle Charge Time Percent of Total Charge Time, VBAT < 2.8V, 25 % Measured Using BATSENS and GNDSENS Pins ISS Soft-Start Ramp Current VBAT < VFLOAT – 100mV, VBAT Across BATSENS 6 12.8 16 µA and GNDSENS Pins VCOLD NTC Pin Cold Temperature Fault From NTC to GNDSENS Pin Threshold Rising Threshold 0.74 VINSENSE V Falling Threshold 0.72 VINSENSE V VHOT NTC Pin Hot Temperature Fault From NTC to GNDSENS Pin Threshold Falling Threshold 0.29 VINSENSE V Rising Threshold 0.30 VINSENSE V VDIS NTC Disable Threshold (Falling) From NTC to GNDSENS Pin 0.015 • 0.02 • 0.025 • V VINSENSE VINSENSE VINSENSE ∆VDIS NTC Disable Hysteresis From NTC to GNDSENS Pin 0.01 • VINSENSE V
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
TJ is calculated from the ambient temperature TA and power may cause permanent damage to the device. Exposure to any Absolute dissipation PD according to the following formula: Maximum Rating condition for extended periods may affect device TJ = TA + (PD • 37°C/W) reliability and lifetime.
Note 5:
This IC includes overtemperature protection that is intended to
Note 2:
Operation with current limited wall adapters is allowed down to the protect the device during momentary overload. Junction temperature will undervoltage lockout threshold. exceed 125°C when overtemperature protection is active. Continuous
Note 3:
The LTC4001E is guaranteed to meet performance specifications operation above the specified maximum operating junction temperature from 0°C to 85°C. Specifications over the – 40°C to 85°C operating my impair device reliability. temperature range are assured by design, characterization and correlation with statistical process controls. 4001f 3
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VIN = 5V, VEN = 0V, RPROG = 549
Ω
, RIDET = 549
Ω
, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tTIMER Timer Accuracy CTIMER = 0.22µF ±10 % VEN Enable Input Threshold Voltage VEN Rising 0.6 0.8 1 V ∆VEN Enable Input Hysteresis 100 mV VPROG PROG Pin Voltage RPROG = 549Ω 1.213 V VIDET IDET Pin Voltage RIDET = 549Ω 1.213 V IIDET IDET Threshold RIDET = 549Ω 150 200 250 mA ICHRG CHRG Pin Weak Pull-Down Current VCHRG = 1V 15 30 50 µA VCHRG CHRG Pin Output Low Voltage ICHRG = 5mA 0.2 0.4 V VOL FAULT Pin Output Low Voltage 1mA Load 0.4 V VOH FAULT Pin Output High Voltage 1mA Load 4.6 V VRECHRG Recharge Battery Threshold Voltage VFLOAT – VRECHRG VBAT Falling 50 100 135 mV tRB Recharge Filter Time Constant 4 ms tRECHRG Recharge Time Percent of Total Charge Time 50 % tTRIKL Low-Battery Trickle Charge Time Percent of Total Charge Time, VBAT < 2.8V, 25 % Measured Using BATSENS and GNDSENS Pins ISS Soft-Start Ramp Current VBAT < VFLOAT – 100mV, VBAT Across BATSENS 6 12.8 16 µA and GNDSENS Pins VCOLD NTC Pin Cold Temperature Fault From NTC to GNDSENS Pin Threshold Rising Threshold 0.74 VINSENSE V Falling Threshold 0.72 VINSENSE V VHOT NTC Pin Hot Temperature Fault From NTC to GNDSENS Pin Threshold Falling Threshold 0.29 VINSENSE V Rising Threshold 0.30 VINSENSE V VDIS NTC Disable Threshold (Falling) From NTC to GNDSENS Pin 0.015 • 0.02 • 0.025 • V VINSENSE VINSENSE VINSENSE ∆VDIS NTC Disable Hysteresis From NTC to GNDSENS Pin 0.01 • VINSENSE V
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
TJ is calculated from the ambient temperature TA and power may cause permanent damage to the device. Exposure to any Absolute dissipation PD according to the following formula: Maximum Rating condition for extended periods may affect device TJ = TA + (PD • 37°C/W) reliability and lifetime.
Note 5:
This IC includes overtemperature protection that is intended to
Note 2:
Operation with current limited wall adapters is allowed down to the protect the device during momentary overload. Junction temperature will undervoltage lockout threshold. exceed 125°C when overtemperature protection is active. Continuous
Note 3:
The LTC4001E is guaranteed to meet performance specifications operation above the specified maximum operating junction temperature from 0°C to 85°C. Specifications over the – 40°C to 85°C operating my impair device reliability. temperature range are assured by design, characterization and correlation with statistical process controls. 4001f 3
