Datasheet IRF4905SPbF, IRF4905LPbF (Infineon) - 3

ManufacturerInfineon
DescriptionHEXFET Power MOSFET Features
Pages / Page12 / 3 — Fig 1. Fig 2. Fig 3. Fig 4
File Format / SizePDF / 370 Kb
Document LanguageEnglish

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IRF4905S/L 1000 1000 VGS VGS TOP -15V ) TOP -15V A -10V -10V ( A t -8.0V ( -8.0V n -7.0V t -7.0V e n r -6.0V e r r -6.0V u r 100 -5.5V u -5.5V C 100 -5.0V C -5.0V e BOTTOM -4.5V BOTTOM -4.5V c e r c u r o uo S- S o - t- ot n - i 10 n a i 10 r ar D -4.5V , D , I D- -4.5V I D- ≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH Tj = 25°C Tj = 150°C 1 1 0.1 1 10 100 1000 0.1 1 10 100 1000 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000.0 40 TJ = 25°C ) TJ = 25°C Α S ( t n e 100.0 e T c r J = 150°C n r 30 a u t C c u e d cr n T u oc J = 150°C o 10.0 s S- n 20 o a t r - T n i d a r r a D 1.0 w , ro I D F 10 - V , DS = -25V sf ≤ 60µs PULSE WIDTH G VDS = -10V 0.1 380µs PULSE WIDTH 3 4 5 6 7 8 9 10 11 12 13 14 0 -V 0 20 40 60 80 GS, Gate-to-Source Voltage (V) -ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance Vs. Drain Current www.irf.com 3