Datasheet LT1101 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | Precision, Micropower, Single Supply Instrumentation Amplifier (Fixed Gain = 10 or 100) |
| Pages / Page | 16 / 6 — ELECTRICAL CHARACTERISTICS VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, … |
| File Format / Size | PDF / 244 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, Gain = 10 or 100,. – 40
Model Line for this Datasheet
Text Version of Document
LT1101
ELECTRICAL CHARACTERISTICS VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, Gain = 10 or 100, – 40
°
C
≤
TA
≤
85
°
C for AI/I grades, unless otherwise noted (Note 4). LT1101AM/AI LT1101M/I SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
GE Gain Error G = 100, V0 = 0.1V to 3.5V, RL = 50k 0.026 0.080 0.028 0.120 % G = 10, VCM = 0.15, RL = 50k 0.011 0.070 0.014 0.100 % TCGE Gain Error Drift RL = 50k (Note 2) 1 4 1 5 ppm/°C GNL Gain Nonlinearity G = 100, RL = 50k 45 110 48 140 ppm G = 10, RL = 50k (Note 2) 4 13 5 15 ppm VOS Input Offset Voltage 90 350 110 500 µV LT1101ISW 110 950 µV ∆VOS/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C LT1101ISW 0.5 4.8 µV/°C lOS Input Offset Current 0.16 0.80 0.19 1.30 nA ∆VOS/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C IB Input Bias Current 7 10 7 12 nA ∆IB/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C CMRR Common Mode G = 100, VCM = 0.1V to 3.2V 91 105 88 104 dB Rejection Ratio G = 10, VCM = 0.1V to 2.9V, VREF = 0.15V 80 98 77 97 dB IS Supply Current 88 135 92 160 µA V0 Maximum 0utput Output High, 50k to GND 3.8 4.1 3.8 4.1 V Voltage Swing Output High, 2k to GND 3.0 3.7 3.0 3.7 V Output Low, VREF = 0, No Load 4.5 8 4.5 8 mV Output Low, VREF = 0, 2k to GND 0.7 1.5 0.7 1.5 mV Output Low, VREF = 0, ISINK = 100µA 125 170 125 170 mV 1101fa 6
ELECTRICAL CHARACTERISTICS VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, Gain = 10 or 100, – 40
°
C
≤
TA
≤
85
°
C for AI/I grades, unless otherwise noted (Note 4). LT1101AM/AI LT1101M/I SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
GE Gain Error G = 100, V0 = 0.1V to 3.5V, RL = 50k 0.026 0.080 0.028 0.120 % G = 10, VCM = 0.15, RL = 50k 0.011 0.070 0.014 0.100 % TCGE Gain Error Drift RL = 50k (Note 2) 1 4 1 5 ppm/°C GNL Gain Nonlinearity G = 100, RL = 50k 45 110 48 140 ppm G = 10, RL = 50k (Note 2) 4 13 5 15 ppm VOS Input Offset Voltage 90 350 110 500 µV LT1101ISW 110 950 µV ∆VOS/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C LT1101ISW 0.5 4.8 µV/°C lOS Input Offset Current 0.16 0.80 0.19 1.30 nA ∆VOS/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C IB Input Bias Current 7 10 7 12 nA ∆IB/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C CMRR Common Mode G = 100, VCM = 0.1V to 3.2V 91 105 88 104 dB Rejection Ratio G = 10, VCM = 0.1V to 2.9V, VREF = 0.15V 80 98 77 97 dB IS Supply Current 88 135 92 160 µA V0 Maximum 0utput Output High, 50k to GND 3.8 4.1 3.8 4.1 V Voltage Swing Output High, 2k to GND 3.0 3.7 3.0 3.7 V Output Low, VREF = 0, No Load 4.5 8 4.5 8 mV Output Low, VREF = 0, 2k to GND 0.7 1.5 0.7 1.5 mV Output Low, VREF = 0, ISINK = 100µA 125 170 125 170 mV 1101fa 6
