Datasheet AD5235 (Analog Devices) - 4

ManufacturerAnalog Devices
DescriptionNonvolatile Memory, Dual 1024-Position Digital Potentiometer
Pages / Page32 / 4 — AD5235. Data Sheet. SPECIFICATIONS ELECTRICAL CHARACTERISTICS—25 kΩ, 250 …
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AD5235. Data Sheet. SPECIFICATIONS ELECTRICAL CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS. Table 1. Parameter. Symbol. Conditions. Min

AD5235 Data Sheet SPECIFICATIONS ELECTRICAL CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS Table 1 Parameter Symbol Conditions Min

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AD5235 Data Sheet SPECIFICATIONS ELECTRICAL CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS
VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V, VSS = −2.5 V, VA = VDD, VB = VSS, −40°C < TA < +85°C, unless otherwise noted. These specifications apply to versions with a date code 1209 or later.
Table 1. Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE (All RDACs) Resistor Differential Nonlinearity2 R-DNL RWB −1 +1 LSB Resistor Integral Nonlinearity2 R-INL RWB −2 +2 LSB Nominal Resistor Tolerance ∆RAB/RAB −8 +8 % Resistance Temperature Coefficient (∆RAB/RAB)/∆T × 106 35 ppm/°C Wiper Resistance RW IW = 1 V/RWB, code = midscale VDD = 5 V 30 60 Ω VDD = 3 V 50 Ω Nominal Resistance Match RAB1/RAB2 ±0.1 % DC CHARACTERISTICS— POTENTIOMETER DIVIDER MODE (Al RDACs) Resolution N 10 Bits Differential Nonlinearity3 DNL −1 +1 LSB Integral Nonlinearity3 INL −1 +1 LSB Voltage Divider Temperature (∆VW/VW)/∆T × 106 Code = midscale 15 ppm/°C Coefficient Full-Scale Error VWFSE Code = full scale −6 0 LSB Zero-Scale Error VWZSE Code = zero scale 0 4 LSB RESISTOR TERMINALS Terminal Voltage Range4 VA, VB, VW VSS VDD V Capacitance Ax, Bx5 CA, CB f = 1 MHz, measured to GND, 11 pF code = midscale Capacitance Wx5 CW f = 1 MHz, measured to GND, 80 pF code = midscale Common-Mode Leakage Current5, 6 ICM VW = VDD/2 0.01 ±1 µA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH With respect to GND, VDD = 5 V 2.4 V Input Logic Low VIL With respect to GND, VDD = 5 V 0.8 V Input Logic High VIH With respect to GND, VDD = 3 V 2.1 V Input Logic Low VIL With respect to GND, VDD = 3 V 0.6 V Input Logic High VIH With respect to GND, VDD = +2.5 V, 2.0 V VSS = −2.5 V Input Logic Low VIL With respect to GND, VDD = +2.5 V, 0.5 V VSS = −2.5 V Output Logic High (SDO, RDY) VOH RPULL-UP = 2.2 kΩ to 5 V (see 4.9 V Figure 38) Output Logic Low VOL IOL = 1.6 mA, VLOGIC = 5 V (see 0.4 V Figure 38) Input Current IIL VIN = 0 V or VDD ±1 µA Input Capacitance5 CIL 5 pF Rev. F | Page 4 of 32 Document Outline Features Applications General Description Functional Block Diagram Revision History Specifications Electrical Characteristics—25 kΩ, 250 kΩ Versions Interface Timing and EEMEM Reliability Characteristics—25 kΩ, 250 kΩ Versions Timing Diagrams Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Theory of Operation Scratchpad and EEMEM Programming Basic Operation EEMEM Protection Digital Input and Output Configuration Serial Data Interface Daisy-Chain Operation Terminal Voltage Operating Range Power-Up Sequence Layout and Power Supply Bypassing Advanced Control Modes Linear Increment and Decrement Instructions Logarithmic Taper Mode Adjustment Using to Re-Execute a Previous Command Using Additional Internal Nonvolatile EEMEM Calculating Actual End-to-End Terminal Resistance RDAC Structure Programming the Variable Resistor Rheostat Operation Programming the Potentiometer Divider Voltage Output Operation Programming Examples EVAL-AD5235SDZ Evaluation Kit Applications Information Bipolar Operation from Dual Supplies Gain Control Compensation High Voltage Operation DAC Bipolar Programmable Gain Amplifier 10-Bit Bipolar DAC Programmable Voltage Source with Boosted Output Programmable Current Source Programmable Bidirectional Current Source Programmable Low-Pass Filter Programmable Oscillator Optical Transmitter Calibration with ADN2841 Resistance Scaling Resistance Tolerance, Drift, and Temperature Coefficient Mismatch Considerations RDAC Circuit Simulation Model Outline Dimensions Ordering Guide
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