Datasheet 2N7000, 2N7002, VQ1000J, VQ1000P, BS170 (Vishay) - 4
| Manufacturer | Vishay |
| Description | N-Channel 60-V (D-S) MOSFET |
| Pages / Page | 6 / 4 — 2N7000/2N7002, VQ1000J/P, BS170. Vishay Siliconix. Output … |
| File Format / Size | PDF / 60 Kb |
| Document Language | English |
2N7000/2N7002, VQ1000J/P, BS170. Vishay Siliconix. Output Characteristics. Transfer Characteristics
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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics Transfer Characteristics
1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 0.8 6 V 0.8 TJ = –55_C 5.5 V 25_C 0.6 0.6 5 V 125_C 0.4 0.4 4.5 V Drain Current (A) Drain Current (A) – – I D 4 V I D 0.2 0.2 3.5 V 3 V 2.5 V 0.0 2, 1 V 0.0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
7 60 VGS = 0 V f = 1 MHz 6 50 Ω ) rDS @ 5 V = VGS 5 40 4 30 3 C On-Resistance ( r iss DS @ 10 V = VGS – Capacitance (pF) 20 (on) 2 – Coss r DS C 10 1 Crss 0 0 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
20 2.0 ID = 0.5 A 16 VGS = 10 V, rDS @ 0.5 A 1.5 Ω ) oltage (V) 12 VDS = 30 V 1.0 (Normalized) VGS = 5 V, rDS @ 0.05 A 8 On-Resistance ( – (on) 0.5 Gate-to-Source V – 4 r DS GSV 0 0.0 0 400 800 1200 1600 2000 2400 –55 –30 –5 20 45 70 95 120 145 Qg – Total Gate Charge (pC) TJ – Junction Temperature (_C) www.vishay.com Document Number: 70226
11-4
S-04279—Rev. F, 16-Jul-01 Document Outline Datasheet Disclaimer
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics Transfer Characteristics
1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 0.8 6 V 0.8 TJ = –55_C 5.5 V 25_C 0.6 0.6 5 V 125_C 0.4 0.4 4.5 V Drain Current (A) Drain Current (A) – – I D 4 V I D 0.2 0.2 3.5 V 3 V 2.5 V 0.0 2, 1 V 0.0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
7 60 VGS = 0 V f = 1 MHz 6 50 Ω ) rDS @ 5 V = VGS 5 40 4 30 3 C On-Resistance ( r iss DS @ 10 V = VGS – Capacitance (pF) 20 (on) 2 – Coss r DS C 10 1 Crss 0 0 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
20 2.0 ID = 0.5 A 16 VGS = 10 V, rDS @ 0.5 A 1.5 Ω ) oltage (V) 12 VDS = 30 V 1.0 (Normalized) VGS = 5 V, rDS @ 0.05 A 8 On-Resistance ( – (on) 0.5 Gate-to-Source V – 4 r DS GSV 0 0.0 0 400 800 1200 1600 2000 2400 –55 –30 –5 20 45 70 95 120 145 Qg – Total Gate Charge (pC) TJ – Junction Temperature (_C) www.vishay.com Document Number: 70226
11-4
S-04279—Rev. F, 16-Jul-01 Document Outline Datasheet Disclaimer
