Datasheet DGTD120T40S1PT (Diodes) - 3

DGTD120T40S1PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 1,200 – – V IC = 1mA, VGE = 0V T –

2.00

2.40

Collector-Emitter Saturation Voltage vj = 25°C VCE(sat) V IC = 40A, VGE = 15V Tvj = 150°C – 2.45 – T –

2.40

3.00

Diode Forward Voltage vj = 25°C VF V IF = 40A

Tvj = 150°C – 2.45 – Gate-Emitter Threshold Voltage VGE(th) 4.5

5.5

6.5

V VCE = VGE, IC = 1mA

Zero Gate Voltage Collector Current ICES –

–

1.0 mA VCE = 1200V, VGE = 0V

Gate-Emitter Leakage Current IGES – – ±250 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge

Qg –

341

– Gate-Emitter Charge

Qge

–

52

–

nC

VCE = 600V, IC = 40A, VGE = 15V

Gate-Collector Charge Qgc –

126 –

Input Capacitance

Cies –

6,030 –

V Reverse Transfer Capacitance

Cres – 107 – pF

CE = 30V, VGE = 0V, f = 1MHz

Output Capacitance Coes – 206 –
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) –

65 –

Rise time tr –

55 –

ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) –

308 –

IC = 40A, RG = 10Ω, Fall Time tf –

40 –

Inductive Load, Turn-on Switching Energy Eon – 1.96 – Tvj = 25°C Turn-off Switching Energy

Eoff – 0.54 – mJ Total Switching Energy

Ets –

2.50 –

Reverse Recovery Time trr – 100 – ns IF = 40A, Reverse Recovery Current Irr – 7 – A diF/dt = 200A/µs, Reverse Recovery Charge Q T rr – 350 – nC vj = 25°C Turn-on Delay Time td(on) –

70 –

Rise time tr –

62 –

ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) –

325 –

IC = 40A, RG = 10Ω, Fall Time tf – 62 – Inductive Load, Turn-on Switching Energy Eon – 2.35 – Tvj = 150°C Turn-off Switching Energy

Eoff –

1.61 –

mJ Total Switching Energy

Ets –

3.96 –

Reverse Recovery Time trr –

180 –

ns IF = 40A, Reverse Recovery Current

Irr –

10 –

A diF/dt = 200A/µs, Reverse Recovery Charge

Q T rr – 900 – nC vj = 150°C DGTD120T40S1PT 3 of 9 March 2018 Document Number DS39664 Rev. 1 - 2
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