Datasheet DGTD65T15H2TF (Diodes) - 4
Manufacturer | Diodes |
Description | 650V Field Stop IGBT |
Pages / Page | 9 / 4 — DGTD65T15H2TF. Electrical Characteristics. Parameter. Symbol. Min. Typ. … |
File Format / Size | PDF / 1.8 Mb |
Document Language | English |
DGTD65T15H2TF. Electrical Characteristics. Parameter. Symbol. Min. Typ. Max. Unit. Condition. STATIC CHARACTERISTICS
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DGTD65T15H2TF Electrical Characteristics
(@Tj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 — — V IC = 2mA, VGE = 0V T —
1.65
2.00
Collector-Emitter Saturation Voltage j = +25°C VCE(sat) V IC = 15A, VGE = 15V
Tj = +175°C — 1.90 — T —
1.85
2.30
Diode Forward Voltage j = +25°C VF V VGE = 0V, IF = 15A
Tj = +175°C — 1.95 — Gate-Emitter Threshold Voltage VGE(th) 4.5
5.5
6.5
V VCE = VGE, IC = 0.5mA
—
—
V I CE = 650V, VGE = 0V, CES 20
µA Zero Gate Voltage Collector Current Tj = +25°C
Gate-Emitter Leakage Current IGES — — ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge
Qg —
61
— Gate-Emitter Charge
Qge
—
11
—
nC
VCE = 520V, IC = 15A, VGE = 15V
Gate-Collector Charge Qgc —
35 —
Input Capacitance
Cies —
1129 —
V Reverse Transfer Capacitance
Cres — 57 — pF
CE = 25V, VGE = 0V, f = 1MHz
Output Capacitance Coes — 31 —
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(on) —
19 —
Rise Time tr —
27 —
ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) —
128 —
IC = 15A, RG = 10Ω, Fall Time tf —
32 —
Inductive Load, Turn-On Switching Energy Eon — 270 — Tj = +25°C Turn-Off Switching Energy
E µJ off — 86 — Total Switching Energy
Ets —
356 —
Turn-On Delay Time td(on) —
17 —
Rise Time tr —
29 —
ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) —
150 —
IC = 15A, RG = 10Ω, Fall Time tf — 130 — Inductive Load, Turn-On Switching Energy Eon — 342 — Tj = +175°C Turn-Off Switching Energy
Eoff —
288 —
µJ Total Switching Energy
Ets —
630 —
Reverse Recovery Time trr —
150 —
ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current
Irr —
5.2 —
A Tj = +25°C Reverse Recovery Charge
Qrr — 390 — nC Reverse Recovery Time
trr — 207 — ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current
Irr — 6.1 — A
Tj = +175°C Reverse Recovery Charge
Qrr — 631 — nC DGTD65T15H2TF 4 of 9 June 2018 Document Number DS39649 Rev. 4 - 2
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© Diodes Incorporated Document Outline Features Description Mechanical Data Characteristic Symbol Value Unit Characteristic Applications Ordering Information (Note 4) Marking Information Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (continued) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (cont.) Package Outline Dimensions