Datasheet DGTD65T40S2PT (Diodes) - 3

DGTD65T40S2PT Electrical Characteristics
(@TJ = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 — — V IC = 2mA, VGE = 0V T —

1.8

2.30

Collector-Emitter Saturation Voltage J = +25° C VCE(SAT) V IC = 40A, VGE = 15V TJ = +175°C — 2.30 — T —

1.50

1.95

Diode Forward Voltage J = +25° C VF V VGE = 0V, IF = 20A

TJ= +175°C — 1.50 — Gate-Emitter Threshold Voltage VGE(TH) 3.5

5.0

6.5

V VCE = VGE, IC = 40mA

Zero Gate Voltage Collector Current ICES —

—

40

µA VCE = 650V, VGE = 0V

Gate-Emitter Leakage Current IGES — — ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge

Qg —

60

— Gate-Emitter Charge

Qge

—

13

—

nC

VCE = 520V, IC = 40A, VGE = 15V

Gate-Collector Charge Qgc —

25 —

Input Capacitance

Cies —

1565 —

V Reverse Transfer Capacitance

Cres — 37 — pF

CE = 25V, VGE = 0V, f = 1MHz

Output Capacitance Coes — 120 —
SWITCHING CHARACTERISTICS
Turn-on Delay Time tD(ON) —

6 —

Rise Time tR —

36 —

ns VGE = 15V, VCC = 400V, Turn-off Delay Time tD(OFF) —

55 —

IC = 40A, RG = 10Ω, Fall Time tF —

64 —

Inductive Load, Turn-on Switching Energy EON — 0.5 — TVJ = +25°C Turn-off Switching Energy

EOFF — 0.4 — mJ Total Switching Energy

ETS —

0.9 —

Reverse Recovery Time tRR — 60 — ns IF = 20A, Reverse Recovery Current IRR — 18 — A diF/dt = 820A/µs, Reverse Recovery Charge Q T RR — 696 — nC VJ = +25° C Turn-on Delay Time tD(ON) —

7 —

Rise Time tR —

41 —

ns VGE = 15V, VCC = 400V, Turn-off Delay Time tD(OFF) —

60 —

IC = 40A, RG = 10Ω , Fall Time tF — 102 — Inductive Load, Turn-on Switching Energy EON — 1.04 — TVJ = +175°C Turn-off Switching Energy

EOFF —

0.57 —

mJ Total Switching Energy

ETS —

1.61 —

Reverse Recovery Time tRR —

72 —

ns IF = 20A, Reverse Recovery Current

IRR —

22 —

A diF/dt = 820A/µs, Reverse Recovery Charge

Q T RR — 864 — nC VJ = +175° C DGTD65T40S2PT 3 of 9 August 2018 Document Number DS41113 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated