Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | NPN and PNP Bipolar Transistor |
| Pages / Page | 13 / 1 — www.onsemi.com. NPN and PNP Silicon. Features. SC−70 (SOT−323). CASE 419. … |
| Revision | 9 |
| File Format / Size | PDF / 132 Kb |
| Document Language | English |
www.onsemi.com. NPN and PNP Silicon. Features. SC−70 (SOT−323). CASE 419. STYLE 3. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
Model Line for this Datasheet
Text Version of Document
link to page 1 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose Transistors
www.onsemi.com NPN and PNP Silicon
COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. 1 BASE
Features
• 2 S Prefix for Automotive and Other Applications Requiring Unique EMITTER Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3
SC−70 (SOT−323)
Compliant
CASE 419
1
STYLE 3
2
MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM
Collector − Emitter Voltage VCEO Vdc MMBT3904WT1, SMMBT3904WT1 40 MMBT3906WT1, SMMBT3906WT1 −40 xx M G Collector − Base Voltage VCBO Vdc G MMBT3904WT1, SMMBT3904WT1 60 MMBT3906WT1, SMMBT3906WT1 −40 1 Emitter − Base Voltage V xx = AM for MMBT3904WT1, EBO Vdc MMBT3904WT1, SMMBT3904WT1 6.0 SMMBT3904WT MMBT3906WT1, SMMBT3906WT1 −5.0 = 2A for MMBT3906WT1, SMMBT3906WT1 Collector Current − Continuous IC mAdc MMBT3904WT1, SMMBT3904WT1 200 M = Date Code* MMBT3906WT1, SMMBT3906WT1 −200 G = Pb−Free Package (Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
*Date Code orientation may vary depending up-
Characteristic Symbol Max Unit
on manufacturing location. Total Device Dissipation (Note 1) PD 150 mW @TA = 25°C
ORDERING INFORMATION
Thermal Resistance, Junction−to−Ambient RqJA 833 °C/W
Device Package Shipping
† Junction and Storage Temperature TJ, Tstg −55 to +150 °C MMBT3904WT1G, SC−70/ 3000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBT3904WT1G SOT−323 Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Pb−Free) 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum MMBT3906WT1G, SC−70/ 3000 / Tape & recommended footprint. SMMBT3906WT1G SOT−323 Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2015 − Rev. 9 MMBT3904WT1/D
www.onsemi.com NPN and PNP Silicon
COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. 1 BASE
Features
• 2 S Prefix for Automotive and Other Applications Requiring Unique EMITTER Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3
SC−70 (SOT−323)
Compliant
CASE 419
1
STYLE 3
2
MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM
Collector − Emitter Voltage VCEO Vdc MMBT3904WT1, SMMBT3904WT1 40 MMBT3906WT1, SMMBT3906WT1 −40 xx M G Collector − Base Voltage VCBO Vdc G MMBT3904WT1, SMMBT3904WT1 60 MMBT3906WT1, SMMBT3906WT1 −40 1 Emitter − Base Voltage V xx = AM for MMBT3904WT1, EBO Vdc MMBT3904WT1, SMMBT3904WT1 6.0 SMMBT3904WT MMBT3906WT1, SMMBT3906WT1 −5.0 = 2A for MMBT3906WT1, SMMBT3906WT1 Collector Current − Continuous IC mAdc MMBT3904WT1, SMMBT3904WT1 200 M = Date Code* MMBT3906WT1, SMMBT3906WT1 −200 G = Pb−Free Package (Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
*Date Code orientation may vary depending up-
Characteristic Symbol Max Unit
on manufacturing location. Total Device Dissipation (Note 1) PD 150 mW @TA = 25°C
ORDERING INFORMATION
Thermal Resistance, Junction−to−Ambient RqJA 833 °C/W
Device Package Shipping
† Junction and Storage Temperature TJ, Tstg −55 to +150 °C MMBT3904WT1G, SC−70/ 3000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBT3904WT1G SOT−323 Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Pb−Free) 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum MMBT3906WT1G, SC−70/ 3000 / Tape & recommended footprint. SMMBT3906WT1G SOT−323 Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2015 − Rev. 9 MMBT3904WT1/D
