DatasheetPZT3904T1G (ON Semiconductor) - 3

ManufacturerON Semiconductor
DescriptionNPN Bipolar Transistor
Pages / Page7 / 3 — PZT3904T1G. TYPICAL TRANSIENT CHARACTERISTICS. Figure 3. Capacitance. …
Revision6
File Format / SizePDF / 146 Kb
Document LanguageEnglish

PZT3904T1G. TYPICAL TRANSIENT CHARACTERISTICS. Figure 3. Capacitance. Figure 4. Charge Data. Figure 5. Turn −On Time

PZT3904T1G TYPICAL TRANSIENT CHARACTERISTICS Figure 3 Capacitance Figure 4 Charge Data Figure 5 Turn −On Time

Model Line for this Datasheet

Text Version of Document

PZT3904T1G TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q Q, CHARGE (pC) 300 T CAP 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3
EMS supplier