Datasheet MMBT2222A, PZT2222A (ON Semiconductor) - 4

Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown
Voltage(5) IC = 10 mA, IB = 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V BV(BR)EBO 6.0 Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V ICBO Collector Cut-Off Current IEBO
IBL V
10 VCB = 60 V, IE = 0 0.01 nA
μA VCB = 60 V, IE = 0, TA = 125°C 10 Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA On Characteristics hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 35 IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 IC = 10 mA, VCE = 10 V,
TA = -55°C 35 IC = 150 mA, VCE = 10 V(5) 100 IC = 150 mA, VCE = 1 V(5) IC = 500 mA, VCE = 10 V(5)
VCE(sat) Collector-Emitter Saturation Voltage(5) VBE(sat) Base-Emitter Saturation Voltage(5) 300 50
40 IC = 150 mA, IB = 15 mA 0.3 IC = 500 mA, IB = 50 mA 1.0 IC = 150 mA, IB = 15 mA 0.6 IC = 500 mA, IB = 50 mA 1.2
2.0 V
V Small Signal Characteristics
Current Gain Bandwidth Product IC = 20 mA, VCE = 20 V,
f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF rb’Cc Collector Base Time Constant IC = 20 mA, VCB = 20 V,
f = 31.8 MHz 150 pS Noise Figure IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 4.0 dB Real Part of Common-Emitter
High Frequency Input Impedance IC = 20 mA, VCE = 20 V,
f = 300 MHz 60 Ω VCC = 30 V, VEB(off) = 0.5 V,
IC = 150 mA, IB1 = 15 mA 10 ns 25 ns VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA 225 ns 60 ns fT NF
Re(hie) 300 MHz Switching Characteristics
td Delay Time tr Rise Time ts Storage Time tf Fall Time Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com
3 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Electrical Characteristics