Datasheet PZT2222A (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | NPN Bipolar Transistor |
| Pages / Page | 7 / 1 — www.onsemi.com. Features. SOT−223 PACKAGE. NPN SILICON TRANSISTOR. … |
| Revision | 11 |
| File Format / Size | PDF / 176 Kb |
| Document Language | English |
www.onsemi.com. Features. SOT−223 PACKAGE. NPN SILICON TRANSISTOR. SURFACE MOUNT. SOT−223 (TO−261). CASE 318E−04. STYLE 1
Model Line for this Datasheet
Text Version of Document
link to page 1 PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
www.onsemi.com Features SOT−223 PACKAGE
• PNP Complement is PZT2907AT1
NPN SILICON TRANSISTOR
• The SOT−223 Package Can be Soldered Using Wave or Reflow
SURFACE MOUNT
• SOT−223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered 4 Joints 1 2 3 • The Formed Leads Absorb Thermal Stress During Soldering,
SOT−223 (TO−261)
Eliminating the Possibility of Damage to the Die
CASE 318E−04
• Available in 12 mm Tape and Reel
STYLE 1
• S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC−Q101 Qualified and 2, 4 PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS BASE 1 Compliant* 3
MAXIMUM RATINGS
EMITTER
Rating Symbol Value Unit MARKING DIAGRAM
Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc AYM Emitter−Base Voltage VEBO 6.0 Vdc P1FG (Open Collector) G Collector Current IC 600 mAdc Total Power Dissipation PD W A = Assembly Location up to TA = 25°C (Note 1) 1.5 Y = Year M = Month Code Storage Temperature Range Tstg − 65 to +150 °C G = Pb−Free Package Junction Temperature°Range TJ − 55 to +150 °C (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
Device Package Shipping
† 0.059 inches; mounting pad for the collector lead min. 0.93 inches2. PZT2222AT1G SOT−223 1,000 Tape & Reel
THERMAL CHARACTERISTICS
(Pb−Free) SPZT2222AT1G SOT−223 1,000 Tape & Reel
Rating Symbol Value Unit
(Pb−Free) Thermal Resistance, RqJA 83.3 °C/W PZT2222AT3G SOT−223 4,000 Tape & Reel Junction−to−Ambient (Pb−Free) Lead Temperature for Soldering, TL 260 °C †For information on tape and reel specifications, 0.0625″ from case 10 Sec including part orientation and tape sizes, please Time in Solder Bath refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2018 − Rev. 11 PZT2222AT1/D
www.onsemi.com Features SOT−223 PACKAGE
• PNP Complement is PZT2907AT1
NPN SILICON TRANSISTOR
• The SOT−223 Package Can be Soldered Using Wave or Reflow
SURFACE MOUNT
• SOT−223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered 4 Joints 1 2 3 • The Formed Leads Absorb Thermal Stress During Soldering,
SOT−223 (TO−261)
Eliminating the Possibility of Damage to the Die
CASE 318E−04
• Available in 12 mm Tape and Reel
STYLE 1
• S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC−Q101 Qualified and 2, 4 PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS BASE 1 Compliant* 3
MAXIMUM RATINGS
EMITTER
Rating Symbol Value Unit MARKING DIAGRAM
Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc AYM Emitter−Base Voltage VEBO 6.0 Vdc P1FG (Open Collector) G Collector Current IC 600 mAdc Total Power Dissipation PD W A = Assembly Location up to TA = 25°C (Note 1) 1.5 Y = Year M = Month Code Storage Temperature Range Tstg − 65 to +150 °C G = Pb−Free Package Junction Temperature°Range TJ − 55 to +150 °C (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
Device Package Shipping
† 0.059 inches; mounting pad for the collector lead min. 0.93 inches2. PZT2222AT1G SOT−223 1,000 Tape & Reel
THERMAL CHARACTERISTICS
(Pb−Free) SPZT2222AT1G SOT−223 1,000 Tape & Reel
Rating Symbol Value Unit
(Pb−Free) Thermal Resistance, RqJA 83.3 °C/W PZT2222AT3G SOT−223 4,000 Tape & Reel Junction−to−Ambient (Pb−Free) Lead Temperature for Soldering, TL 260 °C †For information on tape and reel specifications, 0.0625″ from case 10 Sec including part orientation and tape sizes, please Time in Solder Bath refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2018 − Rev. 11 PZT2222AT1/D
