Datasheet IRF540NS, IRF540NL (International Rectifier)
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 11 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| File Format / Size | PDF / 284 Kb |
| Document Language | English |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
Model Line for this Datasheet
Text Version of Document
PD - 91342B IRF540NS IRF540NL l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44mΩ
Description
G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A techniques to achieve extremely low on-resistance per S silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak TO-262 The through-hole version (IRF540NL) is available for low- IRF540NS IRF540NL profile applications.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 0.87 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.15 °C/W RθJA Junction-to-Ambient (PCB mount)** ––– 40 www.irf.com 1 07/01/05
Description
G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A techniques to achieve extremely low on-resistance per S silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak TO-262 The through-hole version (IRF540NL) is available for low- IRF540NS IRF540NL profile applications.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 0.87 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.15 °C/W RθJA Junction-to-Ambient (PCB mount)** ––– 40 www.irf.com 1 07/01/05
