Datasheet RH1078M (Analog Devices) - 5
| Manufacturer | Analog Devices |
| Description | Micropower, Dual, Single Supply Precision Op Amp |
| Pages / Page | 8 / 5 — TABLE 1A: ELECTRICAL CHARACTERISTICS. (Postirradiation). VS = ±15V unless … |
| Revision | G |
| File Format / Size | PDF / 161 Kb |
| Document Language | English |
TABLE 1A: ELECTRICAL CHARACTERISTICS. (Postirradiation). VS = ±15V unless otherwise specified. 10KRAD(Si). 25KRAD(Si). 50KRAD(Si)
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RH1078M
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V unless otherwise specified. 10KRAD(Si) 25KRAD(Si) 50KRAD(Si) 75KRAD(Si) 100KRAD(Si) SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 350 500 650 800 1000 µV IOS Input Offset Current 2 8 13 18 23 nA IB Input Bias Current 20 40 80 100 120 nA Input Voltage Range 13.5 13.5 13.5 13.5 13.5 V –15.0 –15.0 –15.0 –15.0 –15.0 V CMRR Common Mode VCM = 13.5V, –15V 94 92 90 88 86 dB Rejection Ratio PSRR Power Supply VS = 5V, 0V to ±18V 100 100 98 88 78 dB Rejection Ratio AVOL Large-Signal Voltage VO = 10V, RL = 50k 1000 700 400 150 50 V/mV Gain VO = 10V, RL = 2k 300 200 120 45 15 V/mV VOUT Output Voltage Swing RL = 50k ±13 ±13 ±13 ±13 ±13 V RL = 2k ±11 ±11 ±11 ±11 ±10 V SR Slew Rate 0.05 0.04 0.03 0.02 0.01 V/µs IS Supply Current per Amplifier 100 100 100 100 100 µA Rev. G Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications For more information www.a subject to change without notice. No license is granted by implication or other nalog.com wise under any patent or patent rights of Analog Devices. 5 Document Outline Description Package/Order Information Burn-In Circuit Total Dose Bias Circuit Absolute Maximum Ratings Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Table 2: Electrical Test Requirements Typical Applications Revision History
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V unless otherwise specified. 10KRAD(Si) 25KRAD(Si) 50KRAD(Si) 75KRAD(Si) 100KRAD(Si) SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 350 500 650 800 1000 µV IOS Input Offset Current 2 8 13 18 23 nA IB Input Bias Current 20 40 80 100 120 nA Input Voltage Range 13.5 13.5 13.5 13.5 13.5 V –15.0 –15.0 –15.0 –15.0 –15.0 V CMRR Common Mode VCM = 13.5V, –15V 94 92 90 88 86 dB Rejection Ratio PSRR Power Supply VS = 5V, 0V to ±18V 100 100 98 88 78 dB Rejection Ratio AVOL Large-Signal Voltage VO = 10V, RL = 50k 1000 700 400 150 50 V/mV Gain VO = 10V, RL = 2k 300 200 120 45 15 V/mV VOUT Output Voltage Swing RL = 50k ±13 ±13 ±13 ±13 ±13 V RL = 2k ±11 ±11 ±11 ±11 ±10 V SR Slew Rate 0.05 0.04 0.03 0.02 0.01 V/µs IS Supply Current per Amplifier 100 100 100 100 100 µA Rev. G Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications For more information www.a subject to change without notice. No license is granted by implication or other nalog.com wise under any patent or patent rights of Analog Devices. 5 Document Outline Description Package/Order Information Burn-In Circuit Total Dose Bias Circuit Absolute Maximum Ratings Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Table 2: Electrical Test Requirements Typical Applications Revision History
