BC846- BC850 August 2006 BC846- BC850 tm NPN Epitaxial Silicon TransistorNPNFeaturesEpit • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits axial Silicon T 3 • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 2 SOT-23 1 1. Base 2. Emitter 3. Collector rAbsolute Maximum Ratings* Ta = 25°C unless otherwise noted ansistorSymbolParameterValueUnits VCBO Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V VCEO Collector-Emitter Voltage : BC846 65 V : BC847/850 45 V : BC848/849 30 V VEBO Emitter-Base Voltage : BC846/847 6 V : BC848/849/850 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C