Datasheet BC856BDW1T1G, SBC856BDW1T1G, BC857BDW1T1G, SBC857BDW1T1G, BC858CDW1T1G (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | Dual PNP Bipolar Transistor |
| Pages / Page | 7 / 1 — www.onsemi.com. PNP Duals. SOT−363/SC−88. CASE 419B. STYLE 1. Features. … |
| Revision | 10 |
| File Format / Size | PDF / 85 Kb |
| Document Language | English |
www.onsemi.com. PNP Duals. SOT−363/SC−88. CASE 419B. STYLE 1. Features. MAXIMUM RATINGS. MARKING DIAGRAM. Rating. Symbol. Value. Unit
Model Line for this Datasheet
Text Version of Document
link to page 1 link to page 6 BC856BDW1T1G, SBC856BDW1T1GSeries, BC857BDW1T1G, SBC857BDW1T1GSeries, BC858CDW1T1G Series Dual General Purpose
www.onsemi.com
Transistors
PNP Duals SOT−363/SC−88
These transistors are designed for general purpose amplifier
CASE 419B
applications. They are housed in the SOT−363/SC−88 which is
STYLE 1
designed for low power surface mount applications. (3) (2) (1)
Features
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and Q1 Q2 PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* (4) (5) (6)
MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit
6 Collector − Emitter Voltage VCEO V BC856, SBC856 −65 3x MG BC857, SBC857 −45 G BC858 −30 Collector − Base Voltage VCBO V 1 BC856, SBC856 −80 BC857, SBC857 −50 3x = Specific Device Code BC858 −30 x = B, F, G, or L Emitter − Base Voltage VEBO −5.0 V (See Ordering Information) M = Date Code Collector Current −Continuous IC −100 mAdc G = Pb−Free Package Collector Current − Peak IC −200 mAdc (Note: Microdot may be in either location)
THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit
See detailed ordering and shipping information in the package Total Device Dissipation P dimensions section on page 6 of this data sheet. D 380 mW Per Device 250 mW FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C 3.0 mW/°C Thermal Resistance, RqJA °C/W Junction−to−Ambient 328 Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2016 − Rev. 10 BC856BDW1T1/D
www.onsemi.com
Transistors
PNP Duals SOT−363/SC−88
These transistors are designed for general purpose amplifier
CASE 419B
applications. They are housed in the SOT−363/SC−88 which is
STYLE 1
designed for low power surface mount applications. (3) (2) (1)
Features
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and Q1 Q2 PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* (4) (5) (6)
MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit
6 Collector − Emitter Voltage VCEO V BC856, SBC856 −65 3x MG BC857, SBC857 −45 G BC858 −30 Collector − Base Voltage VCBO V 1 BC856, SBC856 −80 BC857, SBC857 −50 3x = Specific Device Code BC858 −30 x = B, F, G, or L Emitter − Base Voltage VEBO −5.0 V (See Ordering Information) M = Date Code Collector Current −Continuous IC −100 mAdc G = Pb−Free Package Collector Current − Peak IC −200 mAdc (Note: Microdot may be in either location)
THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit
See detailed ordering and shipping information in the package Total Device Dissipation P dimensions section on page 6 of this data sheet. D 380 mW Per Device 250 mW FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C 3.0 mW/°C Thermal Resistance, RqJA °C/W Junction−to−Ambient 328 Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2016 − Rev. 10 BC856BDW1T1/D
