Datasheet F3L11MR12W2M1_B65 (Infineon) - 5

ManufacturerInfineon
Description3-Level 1200 V CoolSiC™ Module
Pages / Page11 / 5 — VorläufigeDaten. PreliminaryData. NTC-Widerstand/NTC-Thermistor …
Revision02_01
File Format / SizePDF / 675 Kb
Document LanguageEnglish

VorläufigeDaten. PreliminaryData. NTC-Widerstand/NTC-Thermistor CharakteristischeWerte/CharacteristicValues

VorläufigeDaten PreliminaryData NTC-Widerstand/NTC-Thermistor CharakteristischeWerte/CharacteristicValues

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F3L11MR12W2M1_B65
VorläufigeDaten PreliminaryData NTC-Widerstand/NTC-Thermistor CharakteristischeWerte/CharacteristicValues
min. typ. max. Nennwiderstand Ratedresistance TNTC = 25°C R25 5,00 kΩ AbweichungvonR100 DeviationofR100 TNTC = 100°C, R100 = 493 Ω ∆R/R -5 5 % Verlustleistung Powerdissipation TNTC = 25°C P25 20,0 mW B-Wert B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-Wert B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-Wert B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K AngabengemäßgültigerApplicationNote. Specificationaccordingtothevalidapplicationnote. Datasheet 5 V2.1 2019-06-26 Document Outline / MOSFET / MOSFET IGBT,3-Level / IGBT,3-Level Diode, 3-Level / Diode, 3-Level Modul / Module NTC-Widerstand / NTC-Thermistor Diagramme / charts Diagramme / charts Diagramme / charts Diagramme / charts Schaltplan / Circuit diagram Gehäuseabmessungen / Package outlines /
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