Datasheet NTE128, NTE129 (NTE Electronics) - 3
| Manufacturer | NTE Electronics |
| Description | Silicon Complementary Small Signal Bipolar Transistors. Audio Output, Video, Driver |
| Pages / Page | 3 / 3 — Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. … |
| File Format / Size | PDF / 28 Kb |
| Document Language | English |
Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. Min. Typ. Max. Unit. Small–Signal Characteristics
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Text Version of Document
Electrical Characteristics (Cont’d):
TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit Small–Signal Characteristics
Current–Gain – Bandwidth Product fT (NTE128 Only) IC = 50mA, VCE = 10V, f = 20MHz 100 – 400 MHz Output Capacitance Cobo NTE128 VCB = 10V, IE = 0, f = 1MHz – – 12 pF NTE129 VCE = 10V, f = 1MHz – – 20 pF Input Capacitance Cibo NTE128 VBE = 500mV, IC = 0, f = 1MHz – – 60 pF NTE129 VEB = 500mV, f = 1MHz – – 110 pF Small–Signal Current Gain hfe NTE128 IC = 1mA, VCE = 5V, f = 1kHz 80 – 400 NTE129 IC = 50mA, VCE = 10V, f = 100MHz 1 – 4 Collector–Base Time Constant rb′Cc (NTE128 Only) IE = 10mA, VCB = 10V, f = 79.8MHz – – 400 ps Noise Figure (NTE128 Only) NF IC = 100µA, VCE = 10V, RS = 1kΩ, – – 4 dB f = 1kHz
Switching Characteristics
(NTE129 Only) Storage Time ts IC = 500mA, IB1 = IB2 = 50mA – – 350 ns Turn–On Time ton IC = 500mA, IB1 = 50mA – – 100 ns Fall Time tf IC = 500mA, IB1 = IB2 = 50mA – – 50 ns .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)
TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit Small–Signal Characteristics
Current–Gain – Bandwidth Product fT (NTE128 Only) IC = 50mA, VCE = 10V, f = 20MHz 100 – 400 MHz Output Capacitance Cobo NTE128 VCB = 10V, IE = 0, f = 1MHz – – 12 pF NTE129 VCE = 10V, f = 1MHz – – 20 pF Input Capacitance Cibo NTE128 VBE = 500mV, IC = 0, f = 1MHz – – 60 pF NTE129 VEB = 500mV, f = 1MHz – – 110 pF Small–Signal Current Gain hfe NTE128 IC = 1mA, VCE = 5V, f = 1kHz 80 – 400 NTE129 IC = 50mA, VCE = 10V, f = 100MHz 1 – 4 Collector–Base Time Constant rb′Cc (NTE128 Only) IE = 10mA, VCB = 10V, f = 79.8MHz – – 400 ps Noise Figure (NTE128 Only) NF IC = 100µA, VCE = 10V, RS = 1kΩ, – – 4 dB f = 1kHz
Switching Characteristics
(NTE129 Only) Storage Time ts IC = 500mA, IB1 = IB2 = 50mA – – 350 ns Turn–On Time ton IC = 500mA, IB1 = 50mA – – 100 ns Fall Time tf IC = 500mA, IB1 = IB2 = 50mA – – 50 ns .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)
