Datasheet TB67S112PG (Toshiba) - 8

TB67S112PG
Electrical Characteristics 1 (Ta=25°C, VM=24 V unless otherwise specified)
Characteristics Symbol Test conditions Min Typ. Max Unit VIN(H) Logic input voltage High level 2.0 ― 5.5 V Logic input voltage VIN(L) Logic input voltage Low level GND ― 0.8 V Input hysteresis voltage VIN(HYS) Logic input pin (Note 1) 100 ― 300 mV High IIN(H) Logic input voltage High level (VIN=3.3 V) ― 33 55 μA Logic input current Low IIN(L) Logic input voltage Low level (VIN=0 V) ― ― 1 μA Consumption current IM Output pins: open, in normal operation, output-stage operation ― 1.6 3.2 mA Remaining voltage of ERR output VOD(L) IOD=10 mA 0 ― 0.5 V Regenerative diode forward voltage VFN IOUT=1.5 A 0.5 1.1 1.5 V Output MOSFET OFF leakage current Ileak VOUT=50 V, Output MOSFET: OFF ― ― 1 μA Output MOSFET On-resistance between drain and source RON(D-S) IOUT=1.5 A ― 0.3 0.4 Ω Note 1: VIN (HYS) is defined as the difference between VIN (H) and VIN (L). VIN (H) is the voltage when the voltage (VIN) to the input pins (IN1 and IN2) is raised and the output pins (OUT1 and OUT2) change from H to L. VIN (L) is the voltage when the VIN (H) is lowered and the output pins (OUT1 and OUT2) change from L to H. VIN (HYS) = VIN (H) – VIN (L) Note: The internal circuits are designed to avoid EMF or leakage current; when the logic signal is applied while the VM is not supplied. Please consider the control signal timing before supplying the VM. 8 2019-07-08