Datasheet SPD50P03L G (Infineon) - 7
| Manufacturer | Infineon |
| Description | OptiMOS -P Power-Transistor |
| Pages / Page | 9 / 7 — SPD50P03L G. 13 Avalanche characteristics. 14 Typ. gate charge. 100. [A]. … |
| Revision | 01_09 |
| File Format / Size | PDF / 395 Kb |
| Document Language | English |
SPD50P03L G. 13 Avalanche characteristics. 14 Typ. gate charge. 100. [A]. [V]. 1000. 120. AV [µs]. gate [nC]
Model Line for this Datasheet
Text Version of Document
SPD50P03L G 13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-50 A pulsed parameter: T j(start) parameter: V DD
100 12
V 6- V 15- V 24- C °25
10
C °100
8
C °150
[A] [V] 10 6 AV GS -I -V 4 2 1 0 1 10 100 1000 0 20 40 60 80 100 120 t AV [µs] -Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
36 V
GS
35
Q g
34 33 [V] 32 ) S BR(DS 31 -V
V gs(th)
30 29
Q g(th) Q sw
Q 28 gate
Q Q
27
g s g d
-60 -20 20 60 100 140 180 T j [°C]
Rev. 1.9 page 7 2012-09-13 Document Outline Untitled
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-50 A pulsed parameter: T j(start) parameter: V DD
100 12
V 6- V 15- V 24- C °25
10
C °100
8
C °150
[A] [V] 10 6 AV GS -I -V 4 2 1 0 1 10 100 1000 0 20 40 60 80 100 120 t AV [µs] -Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
36 V
GS
35
Q g
34 33 [V] 32 ) S BR(DS 31 -V
V gs(th)
30 29
Q g(th) Q sw
Q 28 gate
Q Q
27
g s g d
-60 -20 20 60 100 140 180 T j [°C]
Rev. 1.9 page 7 2012-09-13 Document Outline Untitled
