Datasheet IGT40R070D1 E8220 (Infineon) - 8

ManufacturerInfineon
DescriptionCoolGaN™ 400V enhancement-mode power transistor
Pages / Page16 / 8 — Figure 5. Figure 6. ) 50. I D. I D 40. (V). Figure 7. Figure 8. 200. 120. …
Revision02_00
File Format / SizePDF / 525 Kb
Document LanguageEnglish

Figure 5. Figure 6. ) 50. I D. I D 40. (V). Figure 7. Figure 8. 200. 120. 110. 100. 180. 160. Ω 70. n 60. R 140. -50. -25. 125. 150. I (A). T (°C)

Figure 5 Figure 6 ) 50 I D I D 40 (V) Figure 7 Figure 8 200 120 110 100 180 160 Ω 70 n 60 R 140 -50 -25 125 150 I (A) T (°C)

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IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor
Figure 5
Typ. output characteristics
Figure 6
Typ. output characteristics
90 90
I = 26.1 mA G
80 80 70
I = 10 mA
70
G I = 1 mA
60
G
60
I = 26.1 mA G
50 ) 50
I = 10 mA
)
G
(A (A
I = 0.1mA
I D
G
I D 40 40
I = 1 mA G
30 30 20 20
I = 0.1mA G
10 10 0 0 0 2 4 6 8 10 0 2 4 6 8 10 V (V) V (V) DS DS
ID=f(VDS,IG); Tj= 25 °C ID=f(VDS,IG); Tj= 125 °C
Figure 7
Typ. Drain-source on-state resistance
Figure 8
Drain-source on-state resistance
200 120 110
I = 0.1 mA I = 1 mA G G I = 10 mA I = 26.1 mA I = 8A, V = 3.5V, G G D GS
100 180 90 80 ) ) 160 Ω 70
I = 8A, I = 26.1mA, D G
(m (m ) ) n n 60 (o (o S S D D R 140 50 R 40 30 120 20 10 100 0 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 I (A) T (°C) D J
Rdson=f(ID,IGS); Tj= 125 °C Rdson=f(Tj); ID = 8 A Final Data Sheet 8 Rev. 2.0 2018-04-25
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