Datasheet DSEE29-12CC (IXYS) - 4
| Manufacturer | IXYS |
| Description | High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg |
| Pages / Page | 5 / 4 — DSEE29-12CC. Outlines. ISOPLUS220 |
| File Format / Size | PDF / 295 Kb |
| Document Language | English |
DSEE29-12CC. Outlines. ISOPLUS220
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DSEE29-12CC Outlines ISOPLUS220
2 E A E1 A2 D T Millimeters Inches Dim. min max min max A 4.00 5.00 0.157 0.197 A1 2.50 3.00 0.098 0.118 A2 1.60 1.80 0.063 0.071 1 3 b 0.90 1.30 0.035 0.051 D D D b2 2.35 2.55 0.093 0.100 b4 1.25 1.65 0.049 0.065 c 0.70 1.00 0.028 0.039 D 15.00 16.00 0.591 0.630 D1 12.00 13.00 0.472 0.512 1 2 3 D2 1.10 1.50 0.043 0.059 1 2x b2 D3 14.90 15.50 0.587 0.610 L E 10.00 11.00 0.394 0.433 E1 7.50 8.50 0.295 0.335 e 2.54 BSC 0.100 BSC L L 13.00 14.50 0.512 0.571 L1 3.00 3.50 0.118 0.138 T° 42.5 47.5 W - 0.1 - 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite 3x b c b4 The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e A1 Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1. This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1. W 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b © 2016 IXYS all rights reserved
2 E A E1 A2 D T Millimeters Inches Dim. min max min max A 4.00 5.00 0.157 0.197 A1 2.50 3.00 0.098 0.118 A2 1.60 1.80 0.063 0.071 1 3 b 0.90 1.30 0.035 0.051 D D D b2 2.35 2.55 0.093 0.100 b4 1.25 1.65 0.049 0.065 c 0.70 1.00 0.028 0.039 D 15.00 16.00 0.591 0.630 D1 12.00 13.00 0.472 0.512 1 2 3 D2 1.10 1.50 0.043 0.059 1 2x b2 D3 14.90 15.50 0.587 0.610 L E 10.00 11.00 0.394 0.433 E1 7.50 8.50 0.295 0.335 e 2.54 BSC 0.100 BSC L L 13.00 14.50 0.512 0.571 L1 3.00 3.50 0.118 0.138 T° 42.5 47.5 W - 0.1 - 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite 3x b c b4 The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e A1 Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1. This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1. W 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b © 2016 IXYS all rights reserved
